Abstract
A coupled crystal plasticity phase field damage framework has been developed and applied to modelling damage initiation. A novel implementation of a grain misorientation angle dependent critical energy release rate has been used to determine a reduction in the local critical energy release rate resulting from the effects of intergranular carbide precipitates and grain boundary misorientation. When applied to a notched high temperature 316H austenitic stainless steel specimen, a good correlation between experimental results and void nucleation statistics for a misorientation dependent critical energy release rate was obtained. This has been evaluated through comparison with correlative electron microscopy experimental results, showing the potential of phase field models in the area of early damage formation. Additions to include plastic strain and creep deformation effects were made, and comparisons were drawn with experimental data to investigate the contributions of microstructural geometry properties such as the difference in and average values of Schmid factors across grain boundaries, as well as the loading direction stress and dislocation densities. The limitations to this approach and opportunities for further work in this area are discussed, with specific interest in the need for additional literature data characterising grain boundary carbide precipitation and cavity nucleation analysis.
Original language | English |
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Article number | 103854 |
Journal | International Journal of Plasticity |
Volume | 172 |
Early online date | 16 Dec 2023 |
DOIs | |
Publication status | Published - 1 Jan 2024 |
Bibliographical note
Funding Information:M.S. acknowledges the support by the EPSRC Center for Doctoral Training in Nuclear Energy Futures . The authors thank Prof. Emilio Martínez Pañeda and Dr. Sergio Lucarini for useful discussions about the phase field fracture model. M.M., D.K., E.D., N.G. acknowledge the support by the SINDRI partnership, EPSRC grant EP/V038079/1 .
Publisher Copyright:
© 2023 The Authors
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