Effect of impurities on Raman and photoluminescence spectra of AlN bulk crystals

A Sarua; S Rajasingam; M Kuball; N Garro; O Sancho; A Cros; A Cantarero; D Olguin; B Liu; D Zhuang; JH Edgar

Effect of impurities on Raman and photoluminescence spectra of AlN bulk crystals

A Sarua, S Rajasingam, M Kuball, N Garro, O Sancho, A Cros, A Cantarero, D Olguin, B Liu, D Zhuang, JH Edgar

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

4 Citations (Scopus)

Abstract

Raman scattering and photoluminescence (PL) spectroscopy with sub-bandgap excitation has been applied to explore tracing of common impurities (in particular of oxygen) in AlN. Bulk AlN crystals grown by the high temperature sublimation method were studied. PL bands have been observed at around 375 nm and at 560-660 nm and have been attributed to oxygen and to nitrogen vacancy/aluminium excess defects, respectively. The 375 nm UV PL band was found to shift with oxygen concentration. Micro-Raman spectra of the bulk AlN samples were measured in different polarisations. Besides normal Raman modes of AlN the presence of additional vibrational modes was detected. The modes were discussed and tentatively attributed to oxygen and silicon local vibrational modes (LVMs) in AlN.

Translated title of the contribution	Effect of impurities on Raman and photoluminescence spectra of AlN bulk crystals
Original language	English
Pages (from-to)	297 - 302
Number of pages	6
Journal	Material Research Society Symposium Proceedings
Volume	798
Issue number	Symposium Y – GaN and Related Alloys
Publication status	Published - 2003

Bibliographical note

Editors: Ng, HM; Wraback, M; Hiramatsu, K; Grandjean, N
ISBN: 1558997369
Publisher: Materials Research Society
Name and Venue of Conference: Symposium on GaN and Related Alloys held at the MRS Fall Meeting December 2003, Boston
Conference Organiser: Materials Research Society

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@article{eb831ca8892e46adb1c189229d138ac5,

title = "Effect of impurities on Raman and photoluminescence spectra of AlN bulk crystals",

abstract = "Raman scattering and photoluminescence (PL) spectroscopy with sub-bandgap excitation has been applied to explore tracing of common impurities (in particular of oxygen) in AlN. Bulk AlN crystals grown by the high temperature sublimation method were studied. PL bands have been observed at around 375 nm and at 560-660 nm and have been attributed to oxygen and to nitrogen vacancy/aluminium excess defects, respectively. The 375 nm UV PL band was found to shift with oxygen concentration. Micro-Raman spectra of the bulk AlN samples were measured in different polarisations. Besides normal Raman modes of AlN the presence of additional vibrational modes was detected. The modes were discussed and tentatively attributed to oxygen and silicon local vibrational modes (LVMs) in AlN.",

author = "A Sarua and S Rajasingam and M Kuball and N Garro and O Sancho and A Cros and A Cantarero and D Olguin and B Liu and D Zhuang and JH Edgar",

note = "Editors: Ng, HM; Wraback, M; Hiramatsu, K; Grandjean, N ISBN: 1558997369 Publisher: Materials Research Society Name and Venue of Conference: Symposium on GaN and Related Alloys held at the MRS Fall Meeting December 2003, Boston Conference Organiser: Materials Research Society",

year = "2003",

language = "English",

volume = "798",

pages = "297 -- 302",

journal = "Material Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Cambridge University Press",

number = "Symposium Y – GaN and Related Alloys",

}

Effect of impurities on Raman and photoluminescence spectra of AlN bulk crystals. / Sarua, A; Rajasingam, S; Kuball, M; Garro, N; Sancho, O; Cros, A; Cantarero, A; Olguin, D; Liu, B; Zhuang, D; Edgar, JH.

In: Material Research Society Symposium Proceedings, Vol. 798, No. Symposium Y – GaN and Related Alloys, 2003, p. 297 - 302.

Research output: Contribution to journal › Article (Academic Journal) › peer-review

TY - JOUR

T1 - Effect of impurities on Raman and photoluminescence spectra of AlN bulk crystals

AU - Sarua, A

AU - Rajasingam, S

AU - Kuball, M

AU - Garro, N

AU - Sancho, O

AU - Cros, A

AU - Cantarero, A

AU - Olguin, D

AU - Liu, B

AU - Zhuang, D

AU - Edgar, JH

N1 - Editors: Ng, HM; Wraback, M; Hiramatsu, K; Grandjean, N ISBN: 1558997369 Publisher: Materials Research Society Name and Venue of Conference: Symposium on GaN and Related Alloys held at the MRS Fall Meeting December 2003, Boston Conference Organiser: Materials Research Society

PY - 2003

Y1 - 2003

N2 - Raman scattering and photoluminescence (PL) spectroscopy with sub-bandgap excitation has been applied to explore tracing of common impurities (in particular of oxygen) in AlN. Bulk AlN crystals grown by the high temperature sublimation method were studied. PL bands have been observed at around 375 nm and at 560-660 nm and have been attributed to oxygen and to nitrogen vacancy/aluminium excess defects, respectively. The 375 nm UV PL band was found to shift with oxygen concentration. Micro-Raman spectra of the bulk AlN samples were measured in different polarisations. Besides normal Raman modes of AlN the presence of additional vibrational modes was detected. The modes were discussed and tentatively attributed to oxygen and silicon local vibrational modes (LVMs) in AlN.

AB - Raman scattering and photoluminescence (PL) spectroscopy with sub-bandgap excitation has been applied to explore tracing of common impurities (in particular of oxygen) in AlN. Bulk AlN crystals grown by the high temperature sublimation method were studied. PL bands have been observed at around 375 nm and at 560-660 nm and have been attributed to oxygen and to nitrogen vacancy/aluminium excess defects, respectively. The 375 nm UV PL band was found to shift with oxygen concentration. Micro-Raman spectra of the bulk AlN samples were measured in different polarisations. Besides normal Raman modes of AlN the presence of additional vibrational modes was detected. The modes were discussed and tentatively attributed to oxygen and silicon local vibrational modes (LVMs) in AlN.

M3 - Article (Academic Journal)

VL - 798

SP - 297

EP - 302

JO - Material Research Society Symposium Proceedings

JF - Material Research Society Symposium Proceedings

SN - 0272-9172

IS - Symposium Y – GaN and Related Alloys

ER -