Effect of impurities on Raman and photoluminescence spectra of AlN bulk crystals

A Sarua, S Rajasingam, M Kuball, N Garro, O Sancho, A Cros, A Cantarero, D Olguin, B Liu, D Zhuang, JH Edgar

Research output: Contribution to journalArticle (Academic Journal)peer-review

4 Citations (Scopus)

Abstract

Raman scattering and photoluminescence (PL) spectroscopy with sub-bandgap excitation has been applied to explore tracing of common impurities (in particular of oxygen) in AlN. Bulk AlN crystals grown by the high temperature sublimation method were studied. PL bands have been observed at around 375 nm and at 560-660 nm and have been attributed to oxygen and to nitrogen vacancy/aluminium excess defects, respectively. The 375 nm UV PL band was found to shift with oxygen concentration. Micro-Raman spectra of the bulk AlN samples were measured in different polarisations. Besides normal Raman modes of AlN the presence of additional vibrational modes was detected. The modes were discussed and tentatively attributed to oxygen and silicon local vibrational modes (LVMs) in AlN.
Translated title of the contributionEffect of impurities on Raman and photoluminescence spectra of AlN bulk crystals
Original languageEnglish
Pages (from-to)297 - 302
Number of pages6
JournalMaterial Research Society Symposium Proceedings
Volume798
Issue numberSymposium Y – GaN and Related Alloys
Publication statusPublished - 2003

Bibliographical note

Editors: Ng, HM; Wraback, M; Hiramatsu, K; Grandjean, N
ISBN: 1558997369
Publisher: Materials Research Society
Name and Venue of Conference: Symposium on GaN and Related Alloys held at the MRS Fall Meeting December 2003, Boston
Conference Organiser: Materials Research Society

Structured keywords

  • CDTR

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