Effect of load parasitics on the losses and ringing in high switching speed SiC MOSFET based power converters

Sam D Walder; Xibo Yuan

doi:10.1109/ECCE.2015.7310523

Effect of load parasitics on the losses and ringing in high switching speed SiC MOSFET based power converters

Sam D Walder, Xibo Yuan

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

35 Citations (Scopus)

657 Downloads (Pure)

Abstract

In this paper the effect of parasitic elements of the load connected to a power converter are considered. For the case of a high switching speed converter the equivalent parallel capacitance of the load or line inductance will cause a potentially
large current overshoot, which will in turn lead to increased switching losses. This paper considers the relation between the operating conditions of the converter, such as switching speed, with the loss due to the parasitic elements. The inclusion of a small output filter inductor to reduce the switching loss and ringing is analyzed and a method for calculating suitable component values to reach a desired target performance is presented.

Original language	English
Title of host publication	2015 IEEE Energy Conversion Congress and Exposition (ECCE 2015)
Subtitle of host publication	Proceedings of a meeting held 20-24 September 2015, Montreal, Quebec, Canada
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	6161-6168
Number of pages	8
ISBN (Print)	9781467371520, 9781467371506
DOIs	https://doi.org/10.1109/ECCE.2015.7310523
Publication status	Published - Jan 2016

Publication series

Name	Annual Energy Conversion Congress and Exposition
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISSN (Print)	2329-3721

Keywords

Silicon Carbide
fast switching
output capacitance
parasitics
ringing

Access to Document

10.1109/ECCE.2015.7310523

Sam Walder - ECCE 2015
© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Accepted author manuscript, 2.13 MB

Handle.net

Persistent link

Cite this

Walder, S. D., & Yuan, X. (2016). Effect of load parasitics on the losses and ringing in high switching speed SiC MOSFET based power converters. In 2015 IEEE Energy Conversion Congress and Exposition (ECCE 2015): Proceedings of a meeting held 20-24 September 2015, Montreal, Quebec, Canada (pp. 6161-6168). (Annual Energy Conversion Congress and Exposition). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ECCE.2015.7310523

Walder, Sam D ; Yuan, Xibo. / Effect of load parasitics on the losses and ringing in high switching speed SiC MOSFET based power converters. 2015 IEEE Energy Conversion Congress and Exposition (ECCE 2015): Proceedings of a meeting held 20-24 September 2015, Montreal, Quebec, Canada. Institute of Electrical and Electronics Engineers (IEEE), 2016. pp. 6161-6168 (Annual Energy Conversion Congress and Exposition).

@inproceedings{eef2db7915ba423abcb01730dd27262e,

title = "Effect of load parasitics on the losses and ringing in high switching speed SiC MOSFET based power converters",

abstract = "In this paper the effect of parasitic elements of the load connected to a power converter are considered. For the case of a high switching speed converter the equivalent parallel capacitance of the load or line inductance will cause a potentiallylarge current overshoot, which will in turn lead to increased switching losses. This paper considers the relation between the operating conditions of the converter, such as switching speed, with the loss due to the parasitic elements. The inclusion of a small output filter inductor to reduce the switching loss and ringing is analyzed and a method for calculating suitable component values to reach a desired target performance is presented.",

keywords = "Silicon Carbide, fast switching, output capacitance, parasitics, ringing",

author = "Walder, {Sam D} and Xibo Yuan",

year = "2016",

month = jan,

doi = "10.1109/ECCE.2015.7310523",

language = "English",

isbn = "9781467371520",

series = "Annual Energy Conversion Congress and Exposition",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "6161--6168",

booktitle = "2015 IEEE Energy Conversion Congress and Exposition (ECCE 2015)",

address = "United States",

}

Walder, SD & Yuan, X 2016, Effect of load parasitics on the losses and ringing in high switching speed SiC MOSFET based power converters. in 2015 IEEE Energy Conversion Congress and Exposition (ECCE 2015): Proceedings of a meeting held 20-24 September 2015, Montreal, Quebec, Canada. Annual Energy Conversion Congress and Exposition, Institute of Electrical and Electronics Engineers (IEEE), pp. 6161-6168. https://doi.org/10.1109/ECCE.2015.7310523

Effect of load parasitics on the losses and ringing in high switching speed SiC MOSFET based power converters. / Walder, Sam D; Yuan, Xibo.
2015 IEEE Energy Conversion Congress and Exposition (ECCE 2015): Proceedings of a meeting held 20-24 September 2015, Montreal, Quebec, Canada. Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 6161-6168 (Annual Energy Conversion Congress and Exposition).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Effect of load parasitics on the losses and ringing in high switching speed SiC MOSFET based power converters

AU - Walder, Sam D

AU - Yuan, Xibo

PY - 2016/1

Y1 - 2016/1

N2 - In this paper the effect of parasitic elements of the load connected to a power converter are considered. For the case of a high switching speed converter the equivalent parallel capacitance of the load or line inductance will cause a potentiallylarge current overshoot, which will in turn lead to increased switching losses. This paper considers the relation between the operating conditions of the converter, such as switching speed, with the loss due to the parasitic elements. The inclusion of a small output filter inductor to reduce the switching loss and ringing is analyzed and a method for calculating suitable component values to reach a desired target performance is presented.

AB - In this paper the effect of parasitic elements of the load connected to a power converter are considered. For the case of a high switching speed converter the equivalent parallel capacitance of the load or line inductance will cause a potentiallylarge current overshoot, which will in turn lead to increased switching losses. This paper considers the relation between the operating conditions of the converter, such as switching speed, with the loss due to the parasitic elements. The inclusion of a small output filter inductor to reduce the switching loss and ringing is analyzed and a method for calculating suitable component values to reach a desired target performance is presented.

KW - Silicon Carbide

KW - fast switching

KW - output capacitance

KW - parasitics

KW - ringing

U2 - 10.1109/ECCE.2015.7310523

DO - 10.1109/ECCE.2015.7310523

M3 - Conference Contribution (Conference Proceeding)

SN - 9781467371520

SN - 9781467371506

T3 - Annual Energy Conversion Congress and Exposition

SP - 6161

EP - 6168

BT - 2015 IEEE Energy Conversion Congress and Exposition (ECCE 2015)

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Walder SD, Yuan X. Effect of load parasitics on the losses and ringing in high switching speed SiC MOSFET based power converters. In 2015 IEEE Energy Conversion Congress and Exposition (ECCE 2015): Proceedings of a meeting held 20-24 September 2015, Montreal, Quebec, Canada. Institute of Electrical and Electronics Engineers (IEEE). 2016. p. 6161-6168. (Annual Energy Conversion Congress and Exposition). doi: 10.1109/ECCE.2015.7310523

Effect of load parasitics on the losses and ringing in high switching speed SiC MOSFET based power converters

Abstract

Publication series

Keywords

Access to Document

Handle.net

Fingerprint

Cite this