Effect of load parasitics on the losses and ringing in high switching speed SiC MOSFET based power converters

Sam D Walder, Xibo Yuan

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

25 Citations (Scopus)
467 Downloads (Pure)

Abstract

In this paper the effect of parasitic elements of the load connected to a power converter are considered. For the case of a high switching speed converter the equivalent parallel capacitance of the load or line inductance will cause a potentially
large current overshoot, which will in turn lead to increased switching losses. This paper considers the relation between the operating conditions of the converter, such as switching speed, with the loss due to the parasitic elements. The inclusion of a small output filter inductor to reduce the switching loss and ringing is analyzed and a method for calculating suitable component values to reach a desired target performance is presented.
Original languageEnglish
Title of host publication2015 IEEE Energy Conversion Congress and Exposition (ECCE 2015)
Subtitle of host publicationProceedings of a meeting held 20-24 September 2015, Montreal, Quebec, Canada
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages6161-6168
Number of pages8
ISBN (Print)9781467371520, 9781467371506
DOIs
Publication statusPublished - Jan 2016

Publication series

NameAnnual Energy Conversion Congress and Exposition
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISSN (Print)2329-3721

Keywords

  • Silicon Carbide
  • fast switching
  • output capacitance
  • parasitics
  • ringing

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