The temperature dependence of the lasing wavelength of GaInNAs quantum well laser is found to be 0.394 nm/K, which is smaller than conventional InGaAsP material system. The band anticrossing model is utilised to derive an understanding of this effect.
|Translated title of the contribution||Effect of nitrogen on the temperature induced wavelength shift of GaInNAs lasers|
|Title of host publication||Lasers and Electro-Optics Europe, 2003 (CLEO Europe), Munich, Germany|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Publication status||Published - 22 Jun 2003|