Effect of nitrogen on the temperature induced wavelength shift of GaInNAs lasers

JCL Yong, JM Pozo, M Hill, R Varrazza, JM Rorison, T Jouthi, M Pessa

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

The temperature dependence of the lasing wavelength of GaInNAs quantum well laser is found to be 0.394 nm/K, which is smaller than conventional InGaAsP material system. The band anticrossing model is utilised to derive an understanding of this effect.
Translated title of the contributionEffect of nitrogen on the temperature induced wavelength shift of GaInNAs lasers
Original languageEnglish
Title of host publicationLasers and Electro-Optics Europe, 2003 (CLEO Europe), Munich, Germany
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages203
ISBN (Print)0780377346
DOIs
Publication statusPublished - 22 Jun 2003

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    Yong, JCL., Pozo, JM., Hill, M., Varrazza, R., Rorison, JM., Jouthi, T., & Pessa, M. (2003). Effect of nitrogen on the temperature induced wavelength shift of GaInNAs lasers. In Lasers and Electro-Optics Europe, 2003 (CLEO Europe), Munich, Germany (pp. 203). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/CLEOE.2003.1312264