Effect of nitrogen on the temperature induced wavelength shift of GaInNAs lasers

JCL Yong; JM Pozo; M Hill; R Varrazza; JM Rorison; T Jouthi; M Pessa

doi:10.1109/CLEOE.2003.1312264

Effect of nitrogen on the temperature induced wavelength shift of GaInNAs lasers

JCL Yong
, JM Pozo
, M Hill
, R Varrazza
, JM Rorison
, T Jouthi
, M Pessa

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Abstract

The temperature dependence of the lasing wavelength of GaInNAs quantum well laser is found to be 0.394 nm/K, which is smaller than conventional InGaAsP material system. The band anticrossing model is utilised to derive an understanding of this effect.

Translated title of the contribution	Effect of nitrogen on the temperature induced wavelength shift of GaInNAs lasers
Original language	English
Title of host publication	Lasers and Electro-Optics Europe, 2003 (CLEO Europe), Munich, Germany
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	203
ISBN (Print)	0780377346
DOIs	https://doi.org/10.1109/CLEOE.2003.1312264
Publication status	Published - 22 Jun 2003

Research Groups and Themes

Photonics and Quantum

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10.1109/CLEOE.2003.1312264

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@inproceedings{5012ef92825446f7a0483ecb6ddc0ae5,

title = "Effect of nitrogen on the temperature induced wavelength shift of GaInNAs lasers",

abstract = "The temperature dependence of the lasing wavelength of GaInNAs quantum well laser is found to be 0.394 nm/K, which is smaller than conventional InGaAsP material system. The band anticrossing model is utilised to derive an understanding of this effect.",

author = "JCL Yong and JM Pozo and M Hill and R Varrazza and JM Rorison and T Jouthi and M Pessa",

year = "2003",

month = jun,

day = "22",

doi = "10.1109/CLEOE.2003.1312264",

language = "English",

isbn = "0780377346",

pages = "203",

booktitle = "Lasers and Electro-Optics Europe, 2003 (CLEO Europe), Munich, Germany",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

}

Effect of nitrogen on the temperature induced wavelength shift of GaInNAs lasers. / Yong, JCL; Pozo, JM; Hill, M et al.
Lasers and Electro-Optics Europe, 2003 (CLEO Europe), Munich, Germany. Institute of Electrical and Electronics Engineers (IEEE), 2003. p. 203.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Effect of nitrogen on the temperature induced wavelength shift of GaInNAs lasers

AU - Yong, JCL

AU - Pozo, JM

AU - Hill, M

AU - Varrazza, R

AU - Rorison, JM

AU - Jouthi, T

AU - Pessa, M

PY - 2003/6/22

Y1 - 2003/6/22

N2 - The temperature dependence of the lasing wavelength of GaInNAs quantum well laser is found to be 0.394 nm/K, which is smaller than conventional InGaAsP material system. The band anticrossing model is utilised to derive an understanding of this effect.

AB - The temperature dependence of the lasing wavelength of GaInNAs quantum well laser is found to be 0.394 nm/K, which is smaller than conventional InGaAsP material system. The band anticrossing model is utilised to derive an understanding of this effect.

U2 - 10.1109/CLEOE.2003.1312264

DO - 10.1109/CLEOE.2003.1312264

M3 - Conference Contribution (Conference Proceeding)

SN - 0780377346

SP - 203

BT - Lasers and Electro-Optics Europe, 2003 (CLEO Europe), Munich, Germany

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Effect of nitrogen on the temperature induced wavelength shift of GaInNAs lasers

Abstract

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