Effects of charge confinement and angular strikes in 40 nm dual-and triple-well bulk CMOS SRAMs

Indranil Chatterjee, Bharat L Bhuva, Ronald D Schrimpf, Balaji Narasimham, JK Wang, B Bartz, E Pitta, M Buer

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

8 Citations (Scopus)
Original languageEnglish
Title of host publicationReliability Physics Symposium (IRPS), 2012 IEEE International
Pages5B-3
Publication statusPublished - 2012

Cite this