Effects of charge confinement and angular strikes in 40 nm dual-and triple-well bulk CMOS SRAMs

Indranil Chatterjee, Bharat L Bhuva, Ronald D Schrimpf, Balaji Narasimham, JK Wang, B Bartz, E Pitta, M Buer

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

9 Citations (Scopus)

Original language	English
Title of host publication	Reliability Physics Symposium (IRPS), 2012 IEEE International
Pages	5B-3
Publication status	Published - 2012

Handle.net

@inproceedings{70cd65a06f3344c699d609a0432db991,

title = "Effects of charge confinement and angular strikes in 40 nm dual-and triple-well bulk CMOS SRAMs",

author = "Indranil Chatterjee and Bhuva, {Bharat L} and Schrimpf, {Ronald D} and Balaji Narasimham and JK Wang and B Bartz and E Pitta and M Buer",

year = "2012",

language = "English",

pages = "5B--3",

booktitle = "Reliability Physics Symposium (IRPS), 2012 IEEE International",

}

TY - GEN

T1 - Effects of charge confinement and angular strikes in 40 nm dual-and triple-well bulk CMOS SRAMs

AU - Chatterjee, Indranil

AU - Bhuva, Bharat L

AU - Schrimpf, Ronald D

AU - Narasimham, Balaji

AU - Wang, JK

AU - Bartz, B

AU - Pitta, E

AU - Buer, M

PY - 2012

Y1 - 2012

M3 - Conference Contribution (Conference Proceeding)

SP - 5B-3

BT - Reliability Physics Symposium (IRPS), 2012 IEEE International

ER -