Original language | English |
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Title of host publication | Reliability Physics Symposium (IRPS), 2012 IEEE International |
Pages | 5B-3 |
Publication status | Published - 2012 |
Effects of charge confinement and angular strikes in 40 nm dual-and triple-well bulk CMOS SRAMs
Indranil Chatterjee, Bharat L Bhuva, Ronald D Schrimpf, Balaji Narasimham, JK Wang, B Bartz, E Pitta, M Buer
Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)
9
Citations
(Scopus)