Effects of Si-doping on the microstructure of AlGaN/GaN multiple-quantum-well

R Liu, FA Ponce, S Sahonta, D Cherns, H Amano, I Akasaki

Research output: Contribution to journalArticle (Academic Journal)

Translated title of the contributionEffects of Si-doping on the microstructure of AlGaN/GaN multiple-quantum-well
Original languageEnglish
Pages (from-to)775 - 780
Number of pages6
JournalMaterial Research Society Symposium Proceedings
Volume798
Issue numberSymposium Y – GaN and Related Alloys
Publication statusPublished - 2003

Bibliographical note

ISBN: 1558997369
Publisher: Materials Research Society
Name and Venue of Conference: Symposium on GaN and Related Alloys held at the MRS Fall Meeting, Boston, December 2003
Conference Organiser: Materials Research Society

Cite this

Liu, R., Ponce, FA., Sahonta, S., Cherns, D., Amano, H., & Akasaki, I. (2003). Effects of Si-doping on the microstructure of AlGaN/GaN multiple-quantum-well. Material Research Society Symposium Proceedings, 798(Symposium Y – GaN and Related Alloys), 775 - 780.