Efficient base driver circuit for silicon carbide bipolar junction transistors

N. McNeill; B. H. Stark; S. J. Finney; D. Holliday; H. Dymond

doi:10.1049/el.2018.7057

Efficient base driver circuit for silicon carbide bipolar junction transistors

N. McNeill^*
, B. H. Stark
, S. J. Finney
, D. Holliday
, H. Dymond

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

The silicon carbide bipolar junction transistor needs large transient currents supplied into and out of its base terminal for rapid switching. To realise this, it is normally desirable to have a base driver circuit supply rail at a high voltage. However, the device also needs a steady base current to hold it in the on-state. Supplying this current from a high-voltage source is inefficient. A circuit is presented that applies high transient base-emitter voltages, but with low driver circuit power consumption.

Original language	English
Pages (from-to)	1450-1452
Number of pages	3
Journal	Electronics Letters
Volume	54
Issue number	25
Early online date	17 Dec 2018
DOIs	https://doi.org/10.1049/el.2018.7057
Publication status	Published - Dec 2018

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title = "Efficient base driver circuit for silicon carbide bipolar junction transistors",

abstract = "The silicon carbide bipolar junction transistor needs large transient currents supplied into and out of its base terminal for rapid switching. To realise this, it is normally desirable to have a base driver circuit supply rail at a high voltage. However, the device also needs a steady base current to hold it in the on-state. Supplying this current from a high-voltage source is inefficient. A circuit is presented that applies high transient base-emitter voltages, but with low driver circuit power consumption.",

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AU - Dymond, H.

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N2 - The silicon carbide bipolar junction transistor needs large transient currents supplied into and out of its base terminal for rapid switching. To realise this, it is normally desirable to have a base driver circuit supply rail at a high voltage. However, the device also needs a steady base current to hold it in the on-state. Supplying this current from a high-voltage source is inefficient. A circuit is presented that applies high transient base-emitter voltages, but with low driver circuit power consumption.

AB - The silicon carbide bipolar junction transistor needs large transient currents supplied into and out of its base terminal for rapid switching. To realise this, it is normally desirable to have a base driver circuit supply rail at a high voltage. However, the device also needs a steady base current to hold it in the on-state. Supplying this current from a high-voltage source is inefficient. A circuit is presented that applies high transient base-emitter voltages, but with low driver circuit power consumption.

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Efficient base driver circuit for silicon carbide bipolar junction transistors

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Pulse quietening at source for higher-frequency power and signal switching

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Efficient base driver circuit for silicon carbide bipolar junction transistors

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Pulse quietening at source for higher-frequency power and signal switching

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