Efficient modeling of Coulomb interaction effect on exciton in crystal-phase nanowire quantum dot

Masoomeh Taherkhani; Niels Gregersen; Jesper Mørk; Dara McCutcheon; Morten Willatzen

doi:10.1109/NUSOD.2016.7547003

Efficient modeling of Coulomb interaction effect on exciton in crystal-phase nanowire quantum dot

Masoomeh Taherkhani
, Niels Gregersen
, Jesper Mørk
, Dara McCutcheon
, Morten Willatzen

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

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Abstract

The binding energy and oscillation strength of the ground-state exciton in type-II quantum dot (QD) is calculated by using a post Hartree-Fock method known as the configuration interaction (CI) method which is significantly more efficient than conventional methods like ab initio method. We show that the Coulomb interaction between electron and holes in these structures considerably affects the transition dipole moment which is the key parameter of optical quantum gating in STIRAP (stimulated Raman adiabatic passage) process for implementing quantum gates.

Original language	English
Title of host publication	2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016)
Subtitle of host publication	Proceedings of a meeting held 11-15 July 2016, Sydney, Australia
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	217-218
Number of pages	2
ISBN (Electronic)	9781467386036
ISBN (Print)	9781467386043
DOIs	https://doi.org/10.1109/NUSOD.2016.7547003
Publication status	Published - Sept 2016

Publication series

Name	IEEE International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISSN (Print)	2158-3234

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10.1109/NUSOD.2016.7547003

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Taherkhani, M., Gregersen, N., Mørk, J., McCutcheon, D., & Willatzen, M. (2016). Efficient modeling of Coulomb interaction effect on exciton in crystal-phase nanowire quantum dot. In 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia (pp. 217-218). (IEEE International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/NUSOD.2016.7547003

Taherkhani, Masoomeh ; Gregersen, Niels ; Mørk, Jesper et al. / Efficient modeling of Coulomb interaction effect on exciton in crystal-phase nanowire quantum dot. 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE), 2016. pp. 217-218 (IEEE International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)).

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abstract = "The binding energy and oscillation strength of the ground-state exciton in type-II quantum dot (QD) is calculated by using a post Hartree-Fock method known as the configuration interaction (CI) method which is significantly more efficient than conventional methods like ab initio method. We show that the Coulomb interaction between electron and holes in these structures considerably affects the transition dipole moment which is the key parameter of optical quantum gating in STIRAP (stimulated Raman adiabatic passage) process for implementing quantum gates.",

author = "Masoomeh Taherkhani and Niels Gregersen and Jesper M{\o}rk and Dara McCutcheon and Morten Willatzen",

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Taherkhani, M, Gregersen, N, Mørk, J, McCutcheon, D & Willatzen, M 2016, Efficient modeling of Coulomb interaction effect on exciton in crystal-phase nanowire quantum dot. in 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. IEEE International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Institute of Electrical and Electronics Engineers (IEEE), pp. 217-218. https://doi.org/10.1109/NUSOD.2016.7547003

Efficient modeling of Coulomb interaction effect on exciton in crystal-phase nanowire quantum dot. / Taherkhani, Masoomeh; Gregersen, Niels; Mørk, Jesper et al.
2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 217-218 (IEEE International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Efficient modeling of Coulomb interaction effect on exciton in crystal-phase nanowire quantum dot

AU - Taherkhani, Masoomeh

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AU - Mørk, Jesper

AU - McCutcheon, Dara

AU - Willatzen, Morten

PY - 2016/9

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N2 - The binding energy and oscillation strength of the ground-state exciton in type-II quantum dot (QD) is calculated by using a post Hartree-Fock method known as the configuration interaction (CI) method which is significantly more efficient than conventional methods like ab initio method. We show that the Coulomb interaction between electron and holes in these structures considerably affects the transition dipole moment which is the key parameter of optical quantum gating in STIRAP (stimulated Raman adiabatic passage) process for implementing quantum gates.

AB - The binding energy and oscillation strength of the ground-state exciton in type-II quantum dot (QD) is calculated by using a post Hartree-Fock method known as the configuration interaction (CI) method which is significantly more efficient than conventional methods like ab initio method. We show that the Coulomb interaction between electron and holes in these structures considerably affects the transition dipole moment which is the key parameter of optical quantum gating in STIRAP (stimulated Raman adiabatic passage) process for implementing quantum gates.

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DO - 10.1109/NUSOD.2016.7547003

M3 - Conference Contribution (Conference Proceeding)

SN - 9781467386043

T3 - IEEE International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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BT - 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016)

PB - Institute of Electrical and Electronics Engineers (IEEE)

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Taherkhani M, Gregersen N, Mørk J, McCutcheon D, Willatzen M. Efficient modeling of Coulomb interaction effect on exciton in crystal-phase nanowire quantum dot. In 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016): Proceedings of a meeting held 11-15 July 2016, Sydney, Australia. Institute of Electrical and Electronics Engineers (IEEE). 2016. p. 217-218. (IEEE International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)). Epub 2016 Aug 18. doi: 10.1109/NUSOD.2016.7547003

Efficient modeling of Coulomb interaction effect on exciton in crystal-phase nanowire quantum dot

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