Electric field penetration in Au/Nb: SrTiO3 Schottky junctions probed by bias-dependent internal photoemission

Y. Hikita*, M. Kawamura, C. Bell, H. Y. Hwang, Chris Bell

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

28 Citations (Scopus)

Abstract

Electric field penetration into the metallic side of a Schottky junction is in principle a universal phenomenon, the magnitude of which increases with the semiconductor permittivity. Here, we quantitatively probe this effect using bias-dependent internal photoemission spectroscopy at the Schottky junction between a large dielectric permittivity semiconductor SrTiO3 and gold. A clear linear reduction in the barrier height with increasing interface electric field was observed, highlighting the importance of field penetration into the gold. The interfacial permittivity of SrTiO3 at the interface is reduced from the bulk value, reflecting intrinsic suppression at the interface. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3589375]

Original languageEnglish
Article number192103
Number of pages3
JournalApplied Physics Letters
Volume98
Issue number19
DOIs
Publication statusPublished - 9 May 2011

Keywords

  • THIN DIELECTRIC STRUCTURES
  • TRANSITION-METAL OXIDES
  • STRONTIUM TITANATE
  • TUNNEL JUNCTIONS
  • BARRIER HEIGHT
  • TEMPERATURE
  • CAPACITANCE
  • CONSTANT
  • SURFACE

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