Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

Michael J Uren, Markus Caesar, Serge Karboyan, P. Moens, P. Vanmeerbeek, Martin H H Kuball

Research output: Contribution to journalArticle (Academic Journal)peer-review

45 Citations (Scopus)
604 Downloads (Pure)

Abstract

It is shown by simulation supported by experiment that a reduced surface field effect, associated with compensated deep acceptors, can occur in carbon doped GaN-on-Si power switching AlGaN/GaN transistors, provided there is a vertical leakage path from the 2DEG to the carbon-doped layer. Simulations show that this effect is not present in devices using iron-doped GaN buffers explaining the higher voltage capability of carbon-doped devices.
Original languageEnglish
Pages (from-to)826-828
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number8
DOIs
Publication statusPublished - 8 Jun 2015

Bibliographical note

Date of Acceptance: 02/06/2015

Structured keywords

  • CDTR

Keywords

  • field effect transistors
  • HEMTs
  • microwave transistors
  • power transistors

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