Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

Michael J Uren; Markus Caesar; Serge Karboyan; P. Moens; P. Vanmeerbeek; Martin H H Kuball

doi:10.1109/led.2015.2442293

Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

Michael J Uren
, Markus Caesar
, Serge Karboyan
, P. Moens
, P. Vanmeerbeek
, Martin H H Kuball

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

79 Citations (Scopus)

972 Downloads (Pure)

Abstract

It is shown by simulation supported by experiment that a reduced surface field effect, associated with compensated deep acceptors, can occur in carbon doped GaN-on-Si power switching AlGaN/GaN transistors, provided there is a vertical leakage path from the 2DEG to the carbon-doped layer. Simulations show that this effect is not present in devices using iron-doped GaN buffers explaining the higher voltage capability of carbon-doped devices.

Original language	English
Pages (from-to)	826-828
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	8
DOIs	https://doi.org/10.1109/led.2015.2442293
Publication status	Published - 8 Jun 2015

Bibliographical note

Date of Acceptance: 02/06/2015

Research Groups and Themes

CDTR

Keywords

field effect transistors
HEMTs
microwave transistors
power transistors

Access to Document

10.1109/led.2015.2442293Licence: Unspecified

Uren EDL june 2015 author's version
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Accepted author manuscript, 401 KBLicence: Unspecified

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GaN Electronics: RF Reliability and Degradation Mechanisms.
Kuball, M. H. H. (Principal Investigator)
1/02/14 → 31/07/17
Project: Research
E2coGaN - Energy Efficient Converters using GaN Power Devices
Kuball, M. H. H. (Principal Investigator)
1/04/13 → 31/12/16
Project: Research
Silicon Compatible GaN Power Electronics
Kuball, M. H. H. (Principal Investigator)
1/03/13 → 31/08/18
Project: Research

Professor Michael J Uren
- Michael.Urenbristol.acuk
- School of Physics - Honorary Professor
Person: Honorary and Visiting Academic

Cite this

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title = "Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors",

abstract = "It is shown by simulation supported by experiment that a reduced surface field effect, associated with compensated deep acceptors, can occur in carbon doped GaN-on-Si power switching AlGaN/GaN transistors, provided there is a vertical leakage path from the 2DEG to the carbon-doped layer. Simulations show that this effect is not present in devices using iron-doped GaN buffers explaining the higher voltage capability of carbon-doped devices.",

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T1 - Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

AU - Uren, Michael J

AU - Caesar, Markus

AU - Karboyan, Serge

AU - Moens, P.

AU - Vanmeerbeek, P.

AU - Kuball, Martin H H

N1 - Date of Acceptance: 02/06/2015

PY - 2015/6/8

Y1 - 2015/6/8

N2 - It is shown by simulation supported by experiment that a reduced surface field effect, associated with compensated deep acceptors, can occur in carbon doped GaN-on-Si power switching AlGaN/GaN transistors, provided there is a vertical leakage path from the 2DEG to the carbon-doped layer. Simulations show that this effect is not present in devices using iron-doped GaN buffers explaining the higher voltage capability of carbon-doped devices.

AB - It is shown by simulation supported by experiment that a reduced surface field effect, associated with compensated deep acceptors, can occur in carbon doped GaN-on-Si power switching AlGaN/GaN transistors, provided there is a vertical leakage path from the 2DEG to the carbon-doped layer. Simulations show that this effect is not present in devices using iron-doped GaN buffers explaining the higher voltage capability of carbon-doped devices.

KW - field effect transistors

KW - HEMTs

KW - microwave transistors

KW - power transistors

U2 - 10.1109/led.2015.2442293

DO - 10.1109/led.2015.2442293

M3 - Article (Academic Journal)

SN - 0741-3106

VL - 36

SP - 826

EP - 828

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

ER -

Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

Abstract

Bibliographical note

Research Groups and Themes

Keywords

Access to Document

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Projects

GaN Electronics: RF Reliability and Degradation Mechanisms.

E2coGaN - Energy Efficient Converters using GaN Power Devices

Silicon Compatible GaN Power Electronics

Profiles

Professor Michael J Uren

Cite this