Electrical and thermal characterisation of β-(AlxGa(1-x))2O3/Ga2O3 HEMTs

Taylor Moule; Manikant Singh; Serge Karboyan; Elisha Mercado; Stefano Dalcanale; Michael J. Uren; Yuewei Zhang; Zhanbo Xia; Siddharth Rajan; Martin Kuball

Electrical and thermal characterisation of β-(Al^xGa^(1-x))²O³/Ga²O³ HEMTs

Taylor Moule, Manikant Singh, Serge Karboyan, Elisha Mercado, Stefano Dalcanale, Michael J. Uren, Yuewei Zhang, Zhanbo Xia, Siddharth Rajan, Martin Kuball

Research output: Contribution to conference › Conference Paper › peer-review

2 Citations (Scopus)

Abstract

We report for the first time on the electron trapping and thermal properties of modulation-doped β-(Al_xGa_(1-x))₂O₃/Ga₂O₃ HEMTs. Capacitance-voltage and current transient measurements are used to characterise traps, while Raman nano-thermography is used to extract a thermal resistance of the devices. The fabrication of β-(Al_xGa_(1-x))₂O₃/Ga₂O₃ HEMTs offers a promising route to overcoming Gallium Oxide’s low bulk electron mobility and via reduced carrier scattering in the conduction channel. In this work, we observe a large threshold voltage (V_th) shift during forward-bias capacitance-voltage measurements indicating significant negative charge trapping under the gate. Transient drain-stress measurements have been performed to identify the location of traps which are found to be in the gate and gate-drain access regions. Raman nano-thermography yields a channel R_th of 66±2°Cmm/W for a modulation-doped TLM structure. Identifying and reducing the effect of electron trapping in such devices, alongside effective thermal management is essential for reliable device operation and commercialisation.

Original language	English
Publication status	Published - 29 Apr 2019
Event	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States Duration: 29 Apr 2019 → 2 May 2019

Conference

Conference	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
Country/Territory	United States
City	Minneapolis
Period	29/04/19 → 2/05/19

Bibliographical note

Funding Information:
This work was funded by the UK Engineering and Physical Science Research Council (EPSRC). Funding for the author’s PhD studentship was provided by the Centre for Doctoral Training in Condensed Matter Physics.

Publisher Copyright:
© 2019 CS Mantech. All rights reserved.

Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.

Keywords

Electron Trapping
Gallium Oxide
HEMTs
Thermal Resistance

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Cite this

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title = "Electrical and thermal characterisation of β-(AlxGa(1-x))2O3/Ga2O3 HEMTs",

abstract = "We report for the first time on the electron trapping and thermal properties of modulation-doped β-(AlxGa(1-x))2O3/Ga2O3 HEMTs. Capacitance-voltage and current transient measurements are used to characterise traps, while Raman nano-thermography is used to extract a thermal resistance of the devices. The fabrication of β-(AlxGa(1-x))2O3/Ga2O3 HEMTs offers a promising route to overcoming Gallium Oxide{\textquoteright}s low bulk electron mobility and via reduced carrier scattering in the conduction channel. In this work, we observe a large threshold voltage (Vth) shift during forward-bias capacitance-voltage measurements indicating significant negative charge trapping under the gate. Transient drain-stress measurements have been performed to identify the location of traps which are found to be in the gate and gate-drain access regions. Raman nano-thermography yields a channel Rth of 66±2°Cmm/W for a modulation-doped TLM structure. Identifying and reducing the effect of electron trapping in such devices, alongside effective thermal management is essential for reliable device operation and commercialisation.",

keywords = "Electron Trapping, Gallium Oxide, HEMTs, Thermal Resistance",

author = "Taylor Moule and Manikant Singh and Serge Karboyan and Elisha Mercado and Stefano Dalcanale and Uren, {Michael J.} and Yuewei Zhang and Zhanbo Xia and Siddharth Rajan and Martin Kuball",

note = "Funding Information: This work was funded by the UK Engineering and Physical Science Research Council (EPSRC). Funding for the author{\textquoteright}s PhD studentship was provided by the Centre for Doctoral Training in Condensed Matter Physics. Publisher Copyright: {\textcopyright} 2019 CS Mantech. All rights reserved. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.; 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 ; Conference date: 29-04-2019 Through 02-05-2019",

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month = apr,

day = "29",

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T1 - Electrical and thermal characterisation of β-(AlxGa(1-x))2O3/Ga2O3 HEMTs

AU - Moule, Taylor

AU - Singh, Manikant

AU - Karboyan, Serge

AU - Mercado, Elisha

AU - Dalcanale, Stefano

AU - Uren, Michael J.

AU - Zhang, Yuewei

AU - Xia, Zhanbo

AU - Rajan, Siddharth

AU - Kuball, Martin

N1 - Funding Information: This work was funded by the UK Engineering and Physical Science Research Council (EPSRC). Funding for the author’s PhD studentship was provided by the Centre for Doctoral Training in Condensed Matter Physics. Publisher Copyright: © 2019 CS Mantech. All rights reserved. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 2019/4/29

Y1 - 2019/4/29

N2 - We report for the first time on the electron trapping and thermal properties of modulation-doped β-(AlxGa(1-x))2O3/Ga2O3 HEMTs. Capacitance-voltage and current transient measurements are used to characterise traps, while Raman nano-thermography is used to extract a thermal resistance of the devices. The fabrication of β-(AlxGa(1-x))2O3/Ga2O3 HEMTs offers a promising route to overcoming Gallium Oxide’s low bulk electron mobility and via reduced carrier scattering in the conduction channel. In this work, we observe a large threshold voltage (Vth) shift during forward-bias capacitance-voltage measurements indicating significant negative charge trapping under the gate. Transient drain-stress measurements have been performed to identify the location of traps which are found to be in the gate and gate-drain access regions. Raman nano-thermography yields a channel Rth of 66±2°Cmm/W for a modulation-doped TLM structure. Identifying and reducing the effect of electron trapping in such devices, alongside effective thermal management is essential for reliable device operation and commercialisation.

AB - We report for the first time on the electron trapping and thermal properties of modulation-doped β-(AlxGa(1-x))2O3/Ga2O3 HEMTs. Capacitance-voltage and current transient measurements are used to characterise traps, while Raman nano-thermography is used to extract a thermal resistance of the devices. The fabrication of β-(AlxGa(1-x))2O3/Ga2O3 HEMTs offers a promising route to overcoming Gallium Oxide’s low bulk electron mobility and via reduced carrier scattering in the conduction channel. In this work, we observe a large threshold voltage (Vth) shift during forward-bias capacitance-voltage measurements indicating significant negative charge trapping under the gate. Transient drain-stress measurements have been performed to identify the location of traps which are found to be in the gate and gate-drain access regions. Raman nano-thermography yields a channel Rth of 66±2°Cmm/W for a modulation-doped TLM structure. Identifying and reducing the effect of electron trapping in such devices, alongside effective thermal management is essential for reliable device operation and commercialisation.

KW - Electron Trapping

KW - Gallium Oxide

KW - HEMTs

KW - Thermal Resistance

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T2 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019

Y2 - 29 April 2019 through 2 May 2019

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