We report for the first time on the electron trapping and thermal properties of modulation-doped β-(AlxGa(1-x))2O3/Ga2O3 HEMTs. Capacitance-voltage and current transient measurements are used to characterise traps, while Raman nano-thermography is used to extract a thermal resistance of the devices. The fabrication of β-(AlxGa(1-x))2O3/Ga2O3 HEMTs offers a promising route to overcoming Gallium Oxide’s low bulk electron mobility and via reduced carrier scattering in the conduction channel. In this work, we observe a large threshold voltage (Vth) shift during forward-bias capacitance-voltage measurements indicating significant negative charge trapping under the gate. Transient drain-stress measurements have been performed to identify the location of traps which are found to be in the gate and gate-drain access regions. Raman nano-thermography yields a channel Rth of 66±2°Cmm/W for a modulation-doped TLM structure. Identifying and reducing the effect of electron trapping in such devices, alongside effective thermal management is essential for reliable device operation and commercialisation.
|Publication status||Published - 29 Apr 2019|
|Event||2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States|
Duration: 29 Apr 2019 → 2 May 2019
|Conference||2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019|
|Period||29/04/19 → 2/05/19|
Bibliographical noteFunding Information:
This work was funded by the UK Engineering and Physical Science Research Council (EPSRC). Funding for the author’s PhD studentship was provided by the Centre for Doctoral Training in Condensed Matter Physics.
© 2019 CS Mantech. All rights reserved.
Copyright 2019 Elsevier B.V., All rights reserved.
- Electron Trapping
- Gallium Oxide
- Thermal Resistance