Electrical and thermal performance of AlGaN/GaN HEMTs on diamond substrate for RF applications

D. C. Dumka, T. M. Chou, J. L. Jimenez, D. M. Fanning, Daniel Francis, F. Faili, F. Ejeckam, M. Bernardoni, J. W. Pomeroy, M. Kuball

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

36 Citations (Scopus)

Abstract

Abstract - Thermal conductivity of the substrate affects the performance of high power RF devices. It is a dominant limiting factor in current state-of- the-art GaN HEMTs on SiC substrate. Due to high thermal conductivity, diamond substrate is an attractive alternative for GaN HEMTs. We have developed device quality GaN-on-diamond wafers using CVD diamond and fabricated 0.25 μm gate length HEMTs. We present detailed electrical and thermal results of the fabricated devices, which show RF power comparable to standard GaN-on-SiC HEMTs. We demonstrate over 25 % lower channel temperature for these devices compared to GaN-on-SiC devices. Electrical results using DC and RF tests and thermal results using IR thermography and micro-Raman spectroscopy are included.

Original languageEnglish
Title of host publicationTechnical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
DOIs
Publication statusPublished - 8 Nov 2013
Event2013 35th IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013 - Monterey, CA, United States
Duration: 13 Oct 201316 Oct 2013

Conference

Conference2013 35th IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013
CountryUnited States
CityMonterey, CA
Period13/10/1316/10/13

Structured keywords

  • CDTR

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