Electrodeposited p-type magnetic metal-base transistor

RG Delatorre, ML Munford, V Stenger, AA Pasa, W Schwarzacher, MS Meruvia, IA Hummelgen

Research output: Contribution to journalArticle (Academic Journal)peer-review

10 Citations (Scopus)


In this work the development of a magnetic metal-base transistor that operates by hole transport is reported. The transistor is constructed using p-type silicon as the collector, Co as the base, and Cu2O as the emitter. Both base and emitter are deposited using electrochemical procedures. The transistor shows a magnetic-field-dependent current gain and a magnetocurrent of ~40% observed for a low emitter current value of 2 mA.
Translated title of the contributionElectrodeposited p-type magnetic metal-base transistor
Original languageEnglish
Pages (from-to)1 - 3
Number of pages3
JournalJournal of Applied Physics
Volume99 (8, 08H704)
Publication statusPublished - Apr 2006

Bibliographical note

Publisher: American Institute of Physics


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