Electrodeposited p-type magnetic metal-base transistor

RG Delatorre; ML Munford; V Stenger; AA Pasa; W Schwarzacher; MS Meruvia; IA Hummelgen

doi:10.1063/1.2162819

Electrodeposited p-type magnetic metal-base transistor

RG Delatorre, ML Munford, V Stenger, AA Pasa, W Schwarzacher, MS Meruvia, IA Hummelgen

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

10 Citations (Scopus)

Abstract

In this work the development of a magnetic metal-base transistor that operates by hole transport is reported. The transistor is constructed using p-type silicon as the collector, Co as the base, and Cu2O as the emitter. Both base and emitter are deposited using electrochemical procedures. The transistor shows a magnetic-field-dependent current gain and a magnetocurrent of ~40% observed for a low emitter current value of 2 mA.

Translated title of the contribution	Electrodeposited p-type magnetic metal-base transistor
Original language	English
Pages (from-to)	1 - 3
Number of pages	3
Journal	Journal of Applied Physics
Volume	99 (8, 08H704)
DOIs	https://doi.org/10.1063/1.2162819
Publication status	Published - Apr 2006

Bibliographical note

Publisher: American Institute of Physics

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10.1063/1.2162819

http://link.aip.org/link/?JAPIAU/99/08H704/1

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@article{2755ed2041424b289e376aff4d04592a,

title = "Electrodeposited p-type magnetic metal-base transistor",

abstract = "In this work the development of a magnetic metal-base transistor that operates by hole transport is reported. The transistor is constructed using p-type silicon as the collector, Co as the base, and Cu2O as the emitter. Both base and emitter are deposited using electrochemical procedures. The transistor shows a magnetic-field-dependent current gain and a magnetocurrent of \textasciitilde{}40\% observed for a low emitter current value of 2 mA.",

author = "RG Delatorre and ML Munford and V Stenger and AA Pasa and W Schwarzacher and MS Meruvia and IA Hummelgen",

note = "Publisher: American Institute of Physics",

year = "2006",

month = apr,

doi = "10.1063/1.2162819",

language = "English",

volume = "99 (8, 08H704)",

pages = "1 -- 3",

journal = "Journal of Applied Physics",

issn = "1089-7550",

publisher = "American Institute of Physics (AIP)",

}

TY - JOUR

T1 - Electrodeposited p-type magnetic metal-base transistor

AU - Delatorre, RG

AU - Munford, ML

AU - Stenger, V

AU - Pasa, AA

AU - Schwarzacher, W

AU - Meruvia, MS

AU - Hummelgen, IA

N1 - Publisher: American Institute of Physics

PY - 2006/4

Y1 - 2006/4

N2 - In this work the development of a magnetic metal-base transistor that operates by hole transport is reported. The transistor is constructed using p-type silicon as the collector, Co as the base, and Cu2O as the emitter. Both base and emitter are deposited using electrochemical procedures. The transistor shows a magnetic-field-dependent current gain and a magnetocurrent of ~40% observed for a low emitter current value of 2 mA.

AB - In this work the development of a magnetic metal-base transistor that operates by hole transport is reported. The transistor is constructed using p-type silicon as the collector, Co as the base, and Cu2O as the emitter. Both base and emitter are deposited using electrochemical procedures. The transistor shows a magnetic-field-dependent current gain and a magnetocurrent of ~40% observed for a low emitter current value of 2 mA.

U2 - 10.1063/1.2162819

DO - 10.1063/1.2162819

M3 - Article (Academic Journal)

SN - 1089-7550

VL - 99 (8, 08H704)

SP - 1

EP - 3

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -

Electrodeposited p-type magnetic metal-base transistor

Abstract

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