TY - JOUR

T1 - Electron-electron interaction in doped semiconductors including polar LO phonon effects: application to hot-electron spectrometers in GaAs

AU - Rorison, JM

AU - Herbert, D.C.

N1 - Publisher: IoP

PY - 1986/11

Y1 - 1986/11

N2 - Recent experiments by Levi et al. (1985) and Long et al. (1986) in n-doped GaAs have produced path lengths in the range 300-500 Å at 77K for hot-electron decay. The scattering has been attributed to electron-electron and electron-phonon interactions. The authors have made a detailed theoretical study of electron-electron and electron-phonon effects in GaAs in the doping range n=1017-1018 cm-3 where polar LO phonon and plasmon mode mixing effects are expected to be largest. In a previous study on electron-electron interaction where the authors neglected plasmon-LO-phonon mode mixing, they have shown that plasmon dispersion effects are important in the calculation of path lengths for hot-electron decay. Thus altered dispersion in the initial unmixed modes, mode dispersion in the final modes due to mode-mixing and interaction effects and dynamical screening by the electrons and the phonons will influence the damping of hot electrons in these structures. They use a temperature-dependent Green function approach within the RPA approximation to include lattice polarisation and electron-electron effects and evaluate a wave-vector and frequency-dependent screening function ϵ(q, ω) which they can then use to evaluate the imaginary part of the electron self-energy and hence a path length due to combined electron-electron and electron-LO-phonon interaction

AB - Recent experiments by Levi et al. (1985) and Long et al. (1986) in n-doped GaAs have produced path lengths in the range 300-500 Å at 77K for hot-electron decay. The scattering has been attributed to electron-electron and electron-phonon interactions. The authors have made a detailed theoretical study of electron-electron and electron-phonon effects in GaAs in the doping range n=1017-1018 cm-3 where polar LO phonon and plasmon mode mixing effects are expected to be largest. In a previous study on electron-electron interaction where the authors neglected plasmon-LO-phonon mode mixing, they have shown that plasmon dispersion effects are important in the calculation of path lengths for hot-electron decay. Thus altered dispersion in the initial unmixed modes, mode dispersion in the final modes due to mode-mixing and interaction effects and dynamical screening by the electrons and the phonons will influence the damping of hot electrons in these structures. They use a temperature-dependent Green function approach within the RPA approximation to include lattice polarisation and electron-electron effects and evaluate a wave-vector and frequency-dependent screening function ϵ(q, ω) which they can then use to evaluate the imaginary part of the electron self-energy and hence a path length due to combined electron-electron and electron-LO-phonon interaction

U2 - 10.1088/0022-3719/19/32/011

DO - 10.1088/0022-3719/19/32/011

M3 - Article (Academic Journal)

VL - 19 (32)

SP - 6357

EP - 6371

JO - Journal of Physics C (Solid State Physics)

JF - Journal of Physics C (Solid State Physics)

SN - 0022-3719

ER -