Electron holography studies of the charge on dislocations in GaN

D Cherns, C Jiao, H Mokhtari, J Cai, FA Ponce

Research output: Contribution to journalArticle (Academic Journal)peer-review

Abstract

The measurement of charge on dislocations in GaN by electron holography is described, Recent results are presented showing that edge dislocations in n-doped GaN are highly negatively charged, whereas those in p-doped GaN are positively charged, It is shown that the results are consistent with a model which assumes Fermi level pinning at dislocation states about 2.5 V below the conduction band edge. The application of electron holography to screw dislocations, and the dependence of the observations on the dislocation core structure, are also discussed.
Translated title of the contributionElectron holography studies of the charge on dislocations in GaN
Original languageEnglish
Pages (from-to)924 - 930
Journalphysica status solidi (b)
Volume234 (3)
Publication statusPublished - 2002

Bibliographical note

Publisher: WILEY-V C H VERLAG GMBH

Fingerprint Dive into the research topics of 'Electron holography studies of the charge on dislocations in GaN'. Together they form a unique fingerprint.

Cite this