The measurement of charge on dislocations in GaN by electron holography is described, Recent results are presented showing that edge dislocations in n-doped GaN are highly negatively charged, whereas those in p-doped GaN are positively charged, It is shown that the results are consistent with a model which assumes Fermi level pinning at dislocation states about 2.5 V below the conduction band edge. The application of electron holography to screw dislocations, and the dependence of the observations on the dislocation core structure, are also discussed.
|Translated title of the contribution||Electron holography studies of the charge on dislocations in GaN|
|Pages (from-to)||924 - 930|
|Journal||physica status solidi (b)|
|Publication status||Published - 2002|