Electron Trapping in GaN-on-Si Power HEMTs: Impact of Positive Substrate Bias

Michael J Uren; Markus Caesar; Indranil Chatterjee; Serge Karboyan; M. Meneghini; G. Meneghesso; E. Zanoni; P. Moens; P. Vanmeerbeek; Martin Kuball

Electron Trapping in GaN-on-Si Power HEMTs: Impact of Positive Substrate Bias

Michael J Uren, Markus Caesar, Indranil Chatterjee, Serge Karboyan, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens, P. Vanmeerbeek, Martin Kuball

School of Physics

Research output: Contribution to conference › Conference Abstract

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Abstract

[no short abstract for this paper]

Original language	English
Number of pages	2
Publication status	Published - Aug 2015
Event	Eleventh International Conference on Networking and Services (ICNS 2015) - Rome, Italy Duration: 24 May 2015 → 29 May 2015

Conference

Conference	Eleventh International Conference on Networking and Services (ICNS 2015)
Country/Territory	Italy
City	Rome
Period	24/05/15 → 29/05/15

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Uren ICNS 2015 abstract finalAccepted author manuscript, 543 KB

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E2coGaN - Energy Efficient Converters using GaN Power Devices
Kuball, M. H. H.
1/04/13 → 31/12/16
Project: Research
Silicon Compatible GaN Power Electronics
Kuball, M. H. H.
1/03/13 → 31/08/18
Project: Research

Cite this

@conference{c6a57bf10d6145db8c2810faab488a4b,

title = "Electron Trapping in GaN-on-Si Power HEMTs: Impact of Positive Substrate Bias",

abstract = "[no short abstract for this paper]",

author = "Uren, {Michael J} and Markus Caesar and Indranil Chatterjee and Serge Karboyan and M. Meneghini and G. Meneghesso and E. Zanoni and P. Moens and P. Vanmeerbeek and Martin Kuball",

year = "2015",

month = aug,

language = "English",

note = "Eleventh International Conference on Networking and Services (ICNS 2015) ; Conference date: 24-05-2015 Through 29-05-2015",

}

TY - CONF

T1 - Electron Trapping in GaN-on-Si Power HEMTs

T2 - Eleventh International Conference on Networking and Services (ICNS 2015)

AU - Uren, Michael J

AU - Caesar, Markus

AU - Chatterjee, Indranil

AU - Karboyan, Serge

AU - Meneghini, M.

AU - Meneghesso, G.

AU - Zanoni, E.

AU - Moens, P.

AU - Vanmeerbeek, P.

AU - Kuball, Martin

PY - 2015/8

Y1 - 2015/8

N2 - [no short abstract for this paper]

AB - [no short abstract for this paper]

M3 - Conference Abstract

Y2 - 24 May 2015 through 29 May 2015

ER -

Electron Trapping in GaN-on-Si Power HEMTs: Impact of Positive Substrate Bias

Abstract

Conference

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Projects

E2coGaN - Energy Efficient Converters using GaN Power Devices

Silicon Compatible GaN Power Electronics

Cite this