Electronic structure of In1-xGaxAs quantum dots via finite difference time domain method

GB Ren, JM Rorison

Research output: Contribution to journalArticle (Academic Journal)peer-review

8 Citations (Scopus)

Abstract

We have modified the filter diagonalization method and introduced a continuous gatelike filtering function in the propagation of a random-noise function via the finite difference time domain method to calculate the eigenstates of quantum dot structures. The propagation has been done by the split-operation method in analytically stretched coordinates in complex time domain to ensure the stability. We have demonstrated that the new algorithm is easy to implement, and it greatly improves the efficiency of the simulation making it a useful tool for the electronic calculation in complex systems. We have employed the modified method to calculate the confined states of the electrons and holes in InGaAs/InGaAsP quantum dot structure on a lattice matched (100) InP substrate. The photoluminescence (PL) spectra calculated from the eigenstates of the confined states agree well with reported experiment data.
Translated title of the contributionElectronic structure of In1-xGaxAs quantum dots via finite difference time domain method
Original languageEnglish
Pages (from-to)245318-1 - 245318-6
Number of pages6
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume77
Issue number24
DOIs
Publication statusPublished - Jun 2008

Bibliographical note

Publisher: American Physical Society by AIP

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