Projects per year
Wide-bandgap semiconductors are exploited in several technological fields such as electron emission devices, energy conversion, high-power high-temperature electronics, and electrocatalysis. Their electronic properties vary significantly depending on the functionalization of the surface. Here, we investigated as a proof-of-concept the modulation of the electronic properties of one of the most common wide-bandgap semiconductors, that is, diamonds, to show the tunability of their properties by modifying the surface termination. Photoelectron spectroscopy was used to demonstrate the availability of a wide window of band bending, work function, and electron affinity. The band bending and work function were found to change by up to 360 meV and 2 eV, respectively, by varying the surface from hydrogen- to oxygen-terminated. Because of the negative electron affinity of diamonds, we were able to experimentally show the rigid shift of the whole band structure.
FingerprintDive into the research topics of 'Electronic Structure Tunability of Diamonds by Surface Functionalization'. Together they form a unique fingerprint.
- 1 Finished
NanoESCA II: NanoESCA-Electron Spectroscopy for Chemical Analysis imaged at the Nanoscale (full application)
1/05/15 → 30/04/20