Electronic structures of silicon doped ZnO

R Chowdhury, P Rees, S Adhikari, FL Scarpa, P Wiks S

Research output: Contribution to journalArticle (Academic Journal)peer-review

23 Citations (Scopus)

Abstract

We have calculated the electronic structure of ZnO systems doped with Silicon (Si) using generalized gradient approximation. We found that a donor level is formed while Zn is substituted by Si. The variation in band gap is calculated as a function of Si concentration in Zn1–xSixO (0 ≤ x ≤ 12:5) system and comparisons are made with recently published experimental results. Further, we observed that, substituion of Si at O site forms deep acceptor levels near the top of the valence band, and thereby a weak p-type transformation of the system can be realized.
Translated title of the contributionElectronic structures of silicon doped ZnO
Original languageEnglish
Pages (from-to)1980 - 1985
JournalPhysica B: Condensed Matter
Volume405
DOIs
Publication statusPublished - Apr 2010

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