Electronic structures of silicon doped ZnO

R Chowdhury; P Rees; S Adhikari; FL Scarpa; P Wiks S

doi:10.1016/j.physb.2010.01.084

Electronic structures of silicon doped ZnO

R Chowdhury
, P Rees
, S Adhikari
, FL Scarpa
, P Wiks S

Research output: Contribution to journal › Article (Academic Journal) › peer-review

25 Citations (Scopus)

Abstract

We have calculated the electronic structure of ZnO systems doped with Silicon (Si) using generalized gradient approximation. We found that a donor level is formed while Zn is substituted by Si. The variation in band gap is calculated as a function of Si concentration in Zn1–xSixO (0 ≤ x ≤ 12:5) system and comparisons are made with recently published experimental results. Further, we observed that, substituion of Si at O site forms deep acceptor levels near the top of the valence band, and thereby a weak p-type transformation of the system can be realized.

Translated title of the contribution	Electronic structures of silicon doped ZnO
Original language	English
Pages (from-to)	1980 - 1985
Journal	Physica B: Condensed Matter
Volume	405
DOIs	https://doi.org/10.1016/j.physb.2010.01.084
Publication status	Published - Apr 2010

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title = "Electronic structures of silicon doped ZnO",

abstract = "We have calculated the electronic structure of ZnO systems doped with Silicon (Si) using generalized gradient approximation. We found that a donor level is formed while Zn is substituted by Si. The variation in band gap is calculated as a function of Si concentration in Zn1–xSixO (0 ≤ x ≤ 12:5) system and comparisons are made with recently published experimental results. Further, we observed that, substituion of Si at O site forms deep acceptor levels near the top of the valence band, and thereby a weak p-type transformation of the system can be realized.",

author = "R Chowdhury and P Rees and S Adhikari and FL Scarpa and \{Wiks S\}, P",

year = "2010",

month = apr,

doi = "10.1016/j.physb.2010.01.084",

language = "English",

volume = "405",

pages = "1980 -- 1985",

journal = "Physica B: Condensed Matter",

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T1 - Electronic structures of silicon doped ZnO

AU - Chowdhury, R

AU - Rees, P

AU - Adhikari, S

AU - Scarpa, FL

AU - Wiks S, P

PY - 2010/4

Y1 - 2010/4

N2 - We have calculated the electronic structure of ZnO systems doped with Silicon (Si) using generalized gradient approximation. We found that a donor level is formed while Zn is substituted by Si. The variation in band gap is calculated as a function of Si concentration in Zn1–xSixO (0 ≤ x ≤ 12:5) system and comparisons are made with recently published experimental results. Further, we observed that, substituion of Si at O site forms deep acceptor levels near the top of the valence band, and thereby a weak p-type transformation of the system can be realized.

AB - We have calculated the electronic structure of ZnO systems doped with Silicon (Si) using generalized gradient approximation. We found that a donor level is formed while Zn is substituted by Si. The variation in band gap is calculated as a function of Si concentration in Zn1–xSixO (0 ≤ x ≤ 12:5) system and comparisons are made with recently published experimental results. Further, we observed that, substituion of Si at O site forms deep acceptor levels near the top of the valence band, and thereby a weak p-type transformation of the system can be realized.

U2 - 10.1016/j.physb.2010.01.084

DO - 10.1016/j.physb.2010.01.084

M3 - Article (Academic Journal)

SN - 0921-4526

VL - 405

SP - 1980

EP - 1985

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Electronic structures of silicon doped ZnO

Abstract

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