Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

Pavel Yu Bokov, Tommaso Brazzini, Maria Fatima Romero, Fernando Calle, Martin Feneberg, Rudiger Goldhahn

Research output: Contribution to journalArticle (Academic Journal)peer-review

6 Citations (Scopus)

Abstract

Room temperature electroreflectance (ER) spectroscopy has been used to study the fundamental properties of AlxInyGa1−x−yN/AlN/GaN heterostructures under different applied bias. The (0001)-oriented heterostructures were grown by metal-organic vapor phase epitaxy on sapphire. The band gap energy of the AlxInyGa1−x−yN layers has been determined from analysis of the ER spectra using Aspnes’ model. The obtained values are in good agreement with a nonlinear band gap interpolation equation proposed earlier. Bias-dependent ER allows one to determine the sheet carrier density of the two-dimensional electron gas and the barrier field strength.
Original languageEnglish
Pages (from-to)085014
Number of pages6
JournalSemiconductor Science and Technology
Volume30
Issue number8
Publication statusPublished - 1 Aug 2015

Keywords

  • AlInGaN/GaN
  • HEMT
  • electroreflectance

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