Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

Pavel Yu Bokov; Tommaso Brazzini; Maria Fatima Romero; Fernando Calle; Martin  Feneberg; Rudiger Goldhahn

Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

Pavel Yu Bokov, Tommaso Brazzini, Maria Fatima Romero, Fernando Calle, Martin Feneberg, Rudiger Goldhahn

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

7 Citations (Scopus)

Abstract

Room temperature electroreflectance (ER) spectroscopy has been used to study the fundamental properties of AlxInyGa1−x−yN/AlN/GaN heterostructures under different applied bias. The (0001)-oriented heterostructures were grown by metal-organic vapor phase epitaxy on sapphire. The band gap energy of the AlxInyGa1−x−yN layers has been determined from analysis of the ER spectra using Aspnes’ model. The obtained values are in good agreement with a nonlinear band gap interpolation equation proposed earlier. Bias-dependent ER allows one to determine the sheet carrier density of the two-dimensional electron gas and the barrier field strength.

Original language	English
Pages (from-to)	085014
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	30
Issue number	8
Publication status	Published - 1 Aug 2015

Keywords

AlInGaN/GaN
HEMT
electroreflectance

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@article{fde24772b0144b319f94f48b47879253,

title = "Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures",

abstract = "Room temperature electroreflectance (ER) spectroscopy has been used to study the fundamental properties of AlxInyGa1−x−yN/AlN/GaN heterostructures under different applied bias. The (0001)-oriented heterostructures were grown by metal-organic vapor phase epitaxy on sapphire. The band gap energy of the AlxInyGa1−x−yN layers has been determined from analysis of the ER spectra using Aspnes{\textquoteright} model. The obtained values are in good agreement with a nonlinear band gap interpolation equation proposed earlier. Bias-dependent ER allows one to determine the sheet carrier density of the two-dimensional electron gas and the barrier field strength.",

keywords = "AlInGaN/GaN, HEMT, electroreflectance",

author = "Bokov, {Pavel Yu} and Tommaso Brazzini and Romero, {Maria Fatima} and Fernando Calle and Martin Feneberg and Rudiger Goldhahn",

year = "2015",

month = aug,

day = "1",

language = "English",

volume = "30",

pages = "085014",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing",

number = "8",

}

TY - JOUR

T1 - Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

AU - Bokov, Pavel Yu

AU - Brazzini, Tommaso

AU - Romero, Maria Fatima

AU - Calle, Fernando

AU - Feneberg, Martin

AU - Goldhahn, Rudiger

PY - 2015/8/1

Y1 - 2015/8/1

N2 - Room temperature electroreflectance (ER) spectroscopy has been used to study the fundamental properties of AlxInyGa1−x−yN/AlN/GaN heterostructures under different applied bias. The (0001)-oriented heterostructures were grown by metal-organic vapor phase epitaxy on sapphire. The band gap energy of the AlxInyGa1−x−yN layers has been determined from analysis of the ER spectra using Aspnes’ model. The obtained values are in good agreement with a nonlinear band gap interpolation equation proposed earlier. Bias-dependent ER allows one to determine the sheet carrier density of the two-dimensional electron gas and the barrier field strength.

AB - Room temperature electroreflectance (ER) spectroscopy has been used to study the fundamental properties of AlxInyGa1−x−yN/AlN/GaN heterostructures under different applied bias. The (0001)-oriented heterostructures were grown by metal-organic vapor phase epitaxy on sapphire. The band gap energy of the AlxInyGa1−x−yN layers has been determined from analysis of the ER spectra using Aspnes’ model. The obtained values are in good agreement with a nonlinear band gap interpolation equation proposed earlier. Bias-dependent ER allows one to determine the sheet carrier density of the two-dimensional electron gas and the barrier field strength.

KW - AlInGaN/GaN

KW - HEMT

KW - electroreflectance

M3 - Article (Academic Journal)

SN - 0268-1242

VL - 30

SP - 085014

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

ER -

Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

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