Room temperature electroreflectance (ER) spectroscopy has been used to study the fundamental properties of AlxInyGa1−x−yN/AlN/GaN heterostructures under different applied bias. The (0001)-oriented heterostructures were grown by metal-organic vapor phase epitaxy on sapphire. The band gap energy of the AlxInyGa1−x−yN layers has been determined from analysis of the ER spectra using Aspnes’ model. The obtained values are in good agreement with a nonlinear band gap interpolation equation proposed earlier. Bias-dependent ER allows one to determine the sheet carrier density of the two-dimensional electron gas and the barrier field strength.
|Number of pages||6|
|Journal||Semiconductor Science and Technology|
|Publication status||Published - 1 Aug 2015|