Electrothermal characterization of silicon-on-glass VDMOSFETs

N Nenadovic*, H Schellevis, [No Value] Cuoco, A Griffo, SJCH Theeuwen, LK Nanver, HFF Jos, JW Slotboom

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

Abstract

In this paper silicon-on-glass VDMOSFETs are electrothermally characterized for the first time. The silicon-on-glass transistors are compared with the corresponding bulk-silicon devices by means of electrical measurements of the thermal resistance, and numerical thermal simulations. Very large values of R(TH) are measured on-wafer for each SOG VDMOSFET under test. Nevertheless, the simulations show that the electrothermal feedback is expected to be significantly reduced after the devices are mounted on a thermally conducting PCB. They indicate that the surface mounted SOG VDMOSFETs should have at least as good thermal stability as a bulk-Si VDIVIOSFET with the wafer thickness of only 100 mum.

Original languageEnglish
Title of host publication2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2
Place of PublicationNEW YORK
PublisherIEEE Computer Society
Pages145-148
Number of pages4
ISBN (Print)0-7803-8166-1
Publication statusPublished - 2004
Event24th International Conference on Microelectronics (MIEL 2004) - Nis, Serbia
Duration: 16 May 200419 May 2004

Publication series

NameInternational Conference on Microelectronics-MIEL
PublisherIEEE
ISSN (Print)2159-1660

Conference

Conference24th International Conference on Microelectronics (MIEL 2004)
CountrySerbia
CityNis
Period16/05/0419/05/04

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