Electrothermal power cycling of 15 kV SiC PiN diodes

Chengjun Shen; Saeed Jahdi; Sai Priya Munagala; Nick Simpson; Phil Mellor; Olayiwola Alatise; Jose Ortiz Gonzalez

doi:10.1016/j.microrel.2023.115310

Electrothermal power cycling of 15 kV SiC PiN diodes

Chengjun Shen, Saeed Jahdi^*, Sai Priya Munagala, Nick Simpson, Phil Mellor, Olayiwola Alatise, Jose Ortiz Gonzalez

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

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Abstract

Through extensive experimental measurements for the static and dynamic characteristics, the commercially available 15 kV Silicon Carbide (SiC) PiN diode are evaluated by power cycling. The forward voltage of diodes is used to indirectly measure the junction temperature. The SiC PiN diodes feature smaller die size, less reverse recovery charge and less on-resistance when compared to the commercially available closely rated Silicon PiN diodes. Nevertheless, during the power cycling experiments, the bipolar degradation and the degradation of contact metallization in SiC PiN diode gives rise to the increase of on-resistance even though its on-state losses is not as high as in the Silicon device. Such degradations are not observed from the Silicon PiN diode for the same junction temperature and the same high-temperature duration.

Original language	English
Article number	115310
Number of pages	24
Journal	Microelectronics Reliability
Volume	153
Early online date	30 Dec 2023
DOIs	https://doi.org/10.1016/j.microrel.2023.115310
Publication status	Published - 1 Feb 2024

Bibliographical note

Publisher Copyright:
© 2023 The Authors.

Keywords

SiC
Silicon Carbide
DIODE
PIN
Power cycling
electrothermal ruggedness

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Analysis of performance of SiC bipolar semiconductor devices for grid-level converters
Shen, C. (Author), Jahdi, S. (Supervisor) & Mellor, P. (Supervisor), 5 Dec 2023
Student thesis: Doctoral Thesis › Doctor of Philosophy (PhD)

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title = "Electrothermal power cycling of 15 kV SiC PiN diodes",

abstract = "Through extensive experimental measurements for the static and dynamic characteristics, the commercially available 15 kV Silicon Carbide (SiC) PiN diode are evaluated by power cycling. The forward voltage of diodes is used to indirectly measure the junction temperature. The SiC PiN diodes feature smaller die size, less reverse recovery charge and less on-resistance when compared to the commercially available closely rated Silicon PiN diodes. Nevertheless, during the power cycling experiments, the bipolar degradation and the degradation of contact metallization in SiC PiN diode gives rise to the increase of on-resistance even though its on-state losses is not as high as in the Silicon device. Such degradations are not observed from the Silicon PiN diode for the same junction temperature and the same high-temperature duration.",

keywords = "SiC, Silicon Carbide, DIODE, PIN, Power cycling, electrothermal ruggedness",

author = "Chengjun Shen and Saeed Jahdi and Munagala, {Sai Priya} and Nick Simpson and Phil Mellor and Olayiwola Alatise and Gonzalez, {Jose Ortiz}",

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T1 - Electrothermal power cycling of 15 kV SiC PiN diodes

AU - Shen, Chengjun

AU - Jahdi, Saeed

AU - Munagala, Sai Priya

AU - Simpson, Nick

AU - Mellor, Phil

AU - Alatise, Olayiwola

AU - Gonzalez, Jose Ortiz

PY - 2024/2/1

Y1 - 2024/2/1

N2 - Through extensive experimental measurements for the static and dynamic characteristics, the commercially available 15 kV Silicon Carbide (SiC) PiN diode are evaluated by power cycling. The forward voltage of diodes is used to indirectly measure the junction temperature. The SiC PiN diodes feature smaller die size, less reverse recovery charge and less on-resistance when compared to the commercially available closely rated Silicon PiN diodes. Nevertheless, during the power cycling experiments, the bipolar degradation and the degradation of contact metallization in SiC PiN diode gives rise to the increase of on-resistance even though its on-state losses is not as high as in the Silicon device. Such degradations are not observed from the Silicon PiN diode for the same junction temperature and the same high-temperature duration.

AB - Through extensive experimental measurements for the static and dynamic characteristics, the commercially available 15 kV Silicon Carbide (SiC) PiN diode are evaluated by power cycling. The forward voltage of diodes is used to indirectly measure the junction temperature. The SiC PiN diodes feature smaller die size, less reverse recovery charge and less on-resistance when compared to the commercially available closely rated Silicon PiN diodes. Nevertheless, during the power cycling experiments, the bipolar degradation and the degradation of contact metallization in SiC PiN diode gives rise to the increase of on-resistance even though its on-state losses is not as high as in the Silicon device. Such degradations are not observed from the Silicon PiN diode for the same junction temperature and the same high-temperature duration.

KW - SiC

KW - Silicon Carbide

KW - DIODE

KW - PIN

KW - Power cycling

KW - electrothermal ruggedness

U2 - 10.1016/j.microrel.2023.115310

DO - 10.1016/j.microrel.2023.115310

M3 - Article (Academic Journal)

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JO - Microelectronics Reliability

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