Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress

Chengjun Shen; Saeed Jahdi; Juefei Yang; Olayiwola Alatise; Jose Ortiz-Gonzalez; Phil H Mellor

doi:10.1109/ECCE50734.2022.9948045

Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress

Chengjun Shen, Saeed Jahdi, Juefei Yang, Olayiwola Alatise, Jose Ortiz-Gonzalez, Phil H Mellor

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

2 Citations (Scopus)

154 Downloads (Pure)

Abstract

A comprehensive range of surge current measurements and UIS tests have been conducted for Silicon PiN diodes, SiC JBS diodes and SiC MPS diodes with temperatures ranging to up to 175°C. The results show that the SiC devices outperform the Silicon devices in terms of the avalanche ruggedness, while the SiC MPS diode can compete with the Silicon PiN diode in terms of the surge current performance. These results are validated by the experimental measurements and their subsequent calculated avalanche energy.

Original language	English
Title of host publication	2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
Place of Publication	Detroit, MI, USA
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	7
ISBN (Electronic)	9781728193878
ISBN (Print)	9781728193885
DOIs	https://doi.org/10.1109/ECCE50734.2022.9948045
Publication status	Published - 1 Dec 2022
Event	2022 IEEE Energy Conversion Congress and Exposition (ECCE) - Duration: 9 Oct 2022 → 13 Oct 2022

Publication series

Name	IEEE Energy Conversion Congress and Exposition
ISSN (Print)	2329-3721
ISSN (Electronic)	2329-3748

Conference

Conference	2022 IEEE Energy Conversion Congress and Exposition (ECCE)
Period	9/10/22 → 13/10/22

Bibliographical note

Funding Information:
This work is supported by the UK EPSRC Supergen Energy Networks Hub under grant number EP/S00078X/2.

Publisher Copyright:
© 2022 IEEE.

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Analysis of performance of SiC bipolar semiconductor devices for grid-level converters
Shen, C. (Author), Jahdi, S. (Supervisor) & Mellor, P. (Supervisor), 5 Dec 2023
Student thesis: Doctoral Thesis › Doctor of Philosophy (PhD)

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Shen, C., Jahdi, S., Yang, J., Alatise, O., Ortiz-Gonzalez, J., & Mellor, P. H. (2022). Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress. In 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022 (IEEE Energy Conversion Congress and Exposition). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ECCE50734.2022.9948045

Shen, Chengjun ; Jahdi, Saeed ; Yang, Juefei et al. / Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress. 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022. Detroit, MI, USA : Institute of Electrical and Electronics Engineers (IEEE), 2022. (IEEE Energy Conversion Congress and Exposition).

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title = "Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche \& Surge Current Stress",

abstract = "A comprehensive range of surge current measurements and UIS tests have been conducted for Silicon PiN diodes, SiC JBS diodes and SiC MPS diodes with temperatures ranging to up to 175°C. The results show that the SiC devices outperform the Silicon devices in terms of the avalanche ruggedness, while the SiC MPS diode can compete with the Silicon PiN diode in terms of the surge current performance. These results are validated by the experimental measurements and their subsequent calculated avalanche energy.",

author = "Chengjun Shen and Saeed Jahdi and Juefei Yang and Olayiwola Alatise and Jose Ortiz-Gonzalez and Mellor, \{Phil H\}",

note = "Funding Information: This work is supported by the UK EPSRC Supergen Energy Networks Hub under grant number EP/S00078X/2. Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Energy Conversion Congress and Exposition (ECCE) ; Conference date: 09-10-2022 Through 13-10-2022",

year = "2022",

month = dec,

day = "1",

doi = "10.1109/ECCE50734.2022.9948045",

language = "English",

isbn = "9781728193885",

series = "IEEE Energy Conversion Congress and Exposition",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

booktitle = "2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022",

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Shen, C, Jahdi, S, Yang, J, Alatise, O, Ortiz-Gonzalez, J & Mellor, PH 2022, Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress. in 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022. IEEE Energy Conversion Congress and Exposition, Institute of Electrical and Electronics Engineers (IEEE), Detroit, MI, USA, 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 9/10/22. https://doi.org/10.1109/ECCE50734.2022.9948045

Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress. / Shen, Chengjun; Jahdi, Saeed; Yang, Juefei et al.
2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022. Detroit, MI, USA: Institute of Electrical and Electronics Engineers (IEEE), 2022. (IEEE Energy Conversion Congress and Exposition).

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress

AU - Shen, Chengjun

AU - Jahdi, Saeed

AU - Yang, Juefei

AU - Alatise, Olayiwola

AU - Ortiz-Gonzalez, Jose

AU - Mellor, Phil H

PY - 2022/12/1

Y1 - 2022/12/1

N2 - A comprehensive range of surge current measurements and UIS tests have been conducted for Silicon PiN diodes, SiC JBS diodes and SiC MPS diodes with temperatures ranging to up to 175°C. The results show that the SiC devices outperform the Silicon devices in terms of the avalanche ruggedness, while the SiC MPS diode can compete with the Silicon PiN diode in terms of the surge current performance. These results are validated by the experimental measurements and their subsequent calculated avalanche energy.

AB - A comprehensive range of surge current measurements and UIS tests have been conducted for Silicon PiN diodes, SiC JBS diodes and SiC MPS diodes with temperatures ranging to up to 175°C. The results show that the SiC devices outperform the Silicon devices in terms of the avalanche ruggedness, while the SiC MPS diode can compete with the Silicon PiN diode in terms of the surge current performance. These results are validated by the experimental measurements and their subsequent calculated avalanche energy.

U2 - 10.1109/ECCE50734.2022.9948045

DO - 10.1109/ECCE50734.2022.9948045

M3 - Conference Contribution (Conference Proceeding)

SN - 9781728193885

T3 - IEEE Energy Conversion Congress and Exposition

BT - 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Detroit, MI, USA

T2 - 2022 IEEE Energy Conversion Congress and Exposition (ECCE)

Y2 - 9 October 2022 through 13 October 2022

ER -

Shen C, Jahdi S, Yang J, Alatise O, Ortiz-Gonzalez J, Mellor PH. Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress. In 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022. Detroit, MI, USA: Institute of Electrical and Electronics Engineers (IEEE). 2022. (IEEE Energy Conversion Congress and Exposition). doi: 10.1109/ECCE50734.2022.9948045

Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress

Abstract

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Student theses

Analysis of performance of SiC bipolar semiconductor devices for grid-level converters

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