Elemental engineering: Epitaxial uranium thin films

R. Springell*, B. Detlefs, G. H. Lander, R. C. C. Ward, R. A. Cowley, N. Ling, W. Goetze, R. Ahuja, W. Luo, B. Johansson

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)

12 Citations (Scopus)

Abstract

Epitaxial films of the well-known alpha (orthorhombic) structure and an unusual hcp form of uranium have been grown on Nb and Gd buffers, respectively, by sputtering techniques. In a 5000 A film of alpha-U a charge-density wave has been observed, and its properties are different from those found in the bulk. The 500 A hcp-U film has a c/a ratio of 1.90(1), which is unusually large for the hcp structure. Theoretical calculations show that this hcp form is metastable and predict that it orders magnetically.

Original languageEnglish
Article number193403
Number of pages4
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume78
Issue number19
DOIs
Publication statusPublished - Nov 2008

Keywords

  • buffer layers
  • charge density waves
  • crystal structure
  • gadolinium
  • magnetic epitaxial layers
  • niobium
  • sputter deposition
  • uranium
  • CHARGE-DENSITY-WAVE
  • INTRINSIC STRESS
  • ALPHA-URANIUM
  • X-RAY
  • SCATTERING
  • SYSTEMS
  • GROWTH
  • METALS
  • STATE

Cite this