Energy relaxation of electrons in InAs/GaAs quantum dot molecules

G Ortner, R Oulton, H Kurtze, M Schwab, D R Yakovlev, M Bayer, S Fafard, Z Wasilewski, P Hawrylak

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Abstract

The photoluminescence emission intensities of the exciton states in InAs/GaAs coupled quantum dots are studied with regard to the tunneling-induced dependence on splitting energy. Even at very low excitation, emission from bonding and antibonding states is observed, as long as the splitting ranges between a few and similar to 30 meV. As the splitting is dominated by the conduction band states, this demonstrates an acoustic-phonon relaxation bottleneck for electrons. For larger splittings, only bonding state emission is observed at low excitation, indicating fast carrier relaxation, which is most likely caused by a combination of electron-hole scattering and polaron formation.

Original languageEnglish
Article number165353
Pages (from-to)-
Number of pages6
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume72
Issue number16
DOIs
Publication statusPublished - Oct 2005

Cite this

Ortner, G., Oulton, R., Kurtze, H., Schwab, M., Yakovlev, D. R., Bayer, M., Fafard, S., Wasilewski, Z., & Hawrylak, P. (2005). Energy relaxation of electrons in InAs/GaAs quantum dot molecules. Physical Review B: Condensed Matter and Materials Physics, 72(16), -. [165353]. https://doi.org/10.1103/PhysRevB.72.165353