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Abstract
Electro-optic modulators (EOMs) underpin a wide range of critical applications in both classical and quantum information processing. While these devices have been extensively optimized in a wide range of materials from ferroelectric insulators like lithium niobate to semiconductors like gallium arsenide and indium phosphide, there is a need to explore new design and manufacturing methods with a view towards improving device performance. Here, we demonstrate true push-pull EOMs in a suspended GaAs photonic integrated circuit (PIC) platform by exploiting the orientation induced asymmetry of the Pockels r41 coefficient, and folding the two arms of a cm-scale Mach–Zehnder interferometer (MZI) modulator along two orthogonal crystal axes. Our work also shows the potential of incorporating ideas from micro-electro-mechanical systems (MEMS) in integrated photonics by demonstrating high-performance active devices built around cm-scale suspended waveguides with sub-µm optical mode confinement.
| Original language | English |
|---|---|
| Pages (from-to) | 3033–3042 |
| Number of pages | 10 |
| Journal | Nanophotonics |
| Volume | 14 |
| Issue number | 18 |
| Early online date | 28 Aug 2025 |
| DOIs | |
| Publication status | Published - 1 Sept 2025 |
Bibliographical note
© 2025 the author(s), published by De Gruyter.Keywords
- electro-optic modulators
- Photonic integrated circuits
- gallium arsenide
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Dive into the research topics of 'Engineering cm-scale true push-pull electro-optic modulators in a suspended GaAs photonic integrated circuit platform by exploiting the orientation induced asymmetry of the Pockels r41 coefficient'. Together they form a unique fingerprint.-
SBS3-5: 8031 H2020 SBS3-5 758843
Coimbatore Balram, K. (Principal Investigator)
1/08/16 → …
Project: Research, Parent
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GASP: Gallium Arsenide (III-V) photonic integrated circuits built like Silicon Photonics
Coimbatore Balram, K. (Principal Investigator)
27/07/21 → 26/07/23
Project: Research