Enhanced Electrical Transparency by Ultrathin LaAlO3 Insertion at Oxide Metal/Semiconductor Heterointerfaces

Takeaki Yajima*, Makoto Minohara, Chris Bell, Hiroshi Kumigashira, Masaharu Oshima, Harold Y. Hwang, Yasuyuki Hikita

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

8 Citations (Scopus)
265 Downloads (Pure)


We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO3 surfaces. This field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.

Original languageEnglish
Pages (from-to)1622-1626
Number of pages5
JournalNano Letters
Issue number3
Early online date5 Feb 2015
Publication statusPublished - 11 Mar 2015


  • Interface dipole
  • LaAlO3
  • perovskite oxide
  • polar discontinuity
  • Schottky junction


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