Enhanced Electrical Transparency by Ultrathin LaAlO3 Insertion at Oxide Metal/Semiconductor Heterointerfaces

Takeaki Yajima; Makoto Minohara; Chris Bell; Hiroshi Kumigashira; Masaharu Oshima; Harold Y. Hwang; Yasuyuki Hikita

doi:10.1021/nl504169m

Enhanced Electrical Transparency by Ultrathin LaAlO₃ Insertion at Oxide Metal/Semiconductor Heterointerfaces

Takeaki Yajima^*
, Makoto Minohara
, Chris Bell
, Hiroshi Kumigashira
, Masaharu Oshima
, Harold Y. Hwang
, Yasuyuki Hikita

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

8 Citations (Scopus)

416 Downloads (Pure)

Abstract

We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO₃. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO₃ surfaces. This field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.

Original language	English
Pages (from-to)	1622-1626
Number of pages	5
Journal	Nano Letters
Volume	15
Issue number	3
Early online date	5 Feb 2015
DOIs	https://doi.org/10.1021/nl504169m
Publication status	Published - 11 Mar 2015

Keywords

Interface dipole
LaAlO3
perovskite oxide
polar discontinuity
Schottky junction

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10.1021/nl504169m

Yajima et al.nanoletter-LAO-rev
This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see: http://pubs.acs.org/doi/abs/10.1021/nl504169m
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title = "Enhanced Electrical Transparency by Ultrathin LaAlO3 Insertion at Oxide Metal/Semiconductor Heterointerfaces",

abstract = "We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO3 surfaces. This field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.",

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AU - Yajima, Takeaki

AU - Minohara, Makoto

AU - Bell, Chris

AU - Kumigashira, Hiroshi

AU - Oshima, Masaharu

AU - Hwang, Harold Y.

AU - Hikita, Yasuyuki

PY - 2015/3/11

Y1 - 2015/3/11

N2 - We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO3 surfaces. This field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.

AB - We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO3 surfaces. This field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.

KW - Interface dipole

KW - LaAlO3

KW - perovskite oxide

KW - polar discontinuity

KW - Schottky junction

UR - https://www.scopus.com/pages/publications/84924565464

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JO - Nano Letters

JF - Nano Letters

IS - 3

ER -

Enhanced Electrical Transparency by Ultrathin LaAlO₃ Insertion at Oxide Metal/Semiconductor Heterointerfaces

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Enhanced Electrical Transparency by Ultrathin LaAlO3 Insertion at Oxide Metal/Semiconductor Heterointerfaces

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Enhanced Electrical Transparency by Ultrathin LaAlO₃ Insertion at Oxide Metal/Semiconductor Heterointerfaces