Enhanced photoluminescence of rare-earth doped films prepared by off-axis pulsed laser deposition

R. Serna*, S. Nuñez-Sanchez, Fei Xu, C. N. Afonso

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

9 Citations (Scopus)


Alternate pulsed laser deposition from the host (Al2O 3) and dopant (Er, Yb) targets has been used to prepare artificially nanostructured films in which the rare earth ion-ion separation is controlled in the nanometer scale in order to control energy transfer between ions. One series of films was prepared in the standard on-axis configuration, i.e. a static substrate being centred with respect to the plasma expansion axis. A second series of films was prepared by rotating the substrate with respect to a shifted axis parallel to the plasma expansion one (off-axis configuration). The latter configuration leads to films with enhanced thickness and Er related photoluminescence intensity uniformity. More interestingly, the Er related photoluminescence lifetime in as-grown films increases up to 2.5 ms, which is much higher than the maximum value of 1 ms obtained for the on-axis configuration films. This enhancement is discussed in terms of a decrease of defect density when using the off-axis configuration.

Original languageEnglish
Pages (from-to)5204-5207
Number of pages4
JournalApplied Surface Science
Issue number12
Publication statusPublished - 1 Apr 2011


  • Amorphous aluminum oxide (AlO)
  • Erbium (Er)
  • Photoluminescence
  • Pulsed laser deposition (PLD)
  • Rare-earth
  • Thin film
  • Ytterbium (Yb)


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