Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers

AY Loudon, PA Hiskett, GS Buller, RT Carline, DC Herbert, WY Leong, JG Rarity

Research output: Contribution to journalArticle (Academic Journal)peer-review

37 Citations (Scopus)

Abstract

An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si0.7Ge0.3 device is capable of room-temperature operation and has a response time of less than 300 ps.
Translated title of the contributionEnhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers
Original languageEnglish
Pages (from-to)219 - 221
Number of pages3
JournalOptics Letters
Volume27 (4)
DOIs
Publication statusPublished - Feb 2002

Bibliographical note

Publisher: Optical Society of America

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