An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si0.7Ge0.3 device is capable of room-temperature operation and has a response time of less than 300 ps.
|Translated title of the contribution||Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers|
|Pages (from-to)||219 - 221|
|Number of pages||3|
|Publication status||Published - Feb 2002|