An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si0.7Ge0.3 device is capable of room-temperature operation and has a response time of less than 300 ps.
|Translated title of the contribution
|Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers
|219 - 221
|Number of pages
|Published - Feb 2002
Bibliographical notePublisher: Optical Society of America
- Photonics and Quantum