Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers

AY Loudon; PA Hiskett; GS Buller; RT Carline; DC Herbert; WY Leong; JG Rarity

doi:10.1364/OL.27.000219

Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers

AY Loudon, PA Hiskett, GS Buller, RT Carline, DC Herbert, WY Leong, JG Rarity

Research output: Contribution to journal › Article (Academic Journal) › peer-review

37 Citations (Scopus)

Abstract

An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si0.7Ge0.3 device is capable of room-temperature operation and has a response time of less than 300 ps.

Translated title of the contribution	Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers
Original language	English
Pages (from-to)	219 - 221
Number of pages	3
Journal	Optics Letters
Volume	27 (4)
DOIs	https://doi.org/10.1364/OL.27.000219
Publication status	Published - Feb 2002

Bibliographical note

Publisher: Optical Society of America

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10.1364/OL.27.000219

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title = "Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers",

abstract = "An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si0.7Ge0.3 device is capable of room-temperature operation and has a response time of less than 300 ps.",

author = "AY Loudon and PA Hiskett and GS Buller and RT Carline and DC Herbert and WY Leong and JG Rarity",

note = "Publisher: Optical Society of America",

year = "2002",

month = feb,

doi = "10.1364/OL.27.000219",

language = "English",

volume = "27 (4)",

pages = "219 -- 221",

journal = "Optics Letters",

issn = "0146-9592",

publisher = "Optical Society of America (OSA)",

}

Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers. / Loudon, AY; Hiskett, PA; Buller, GS; Carline, RT; Herbert, DC; Leong, WY; Rarity, JG.

In: Optics Letters, Vol. 27 (4), 02.2002, p. 219 - 221.

Research output: Contribution to journal › Article (Academic Journal) › peer-review

TY - JOUR

T1 - Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers

AU - Loudon, AY

AU - Hiskett, PA

AU - Buller, GS

AU - Carline, RT

AU - Herbert, DC

AU - Leong, WY

AU - Rarity, JG

N1 - Publisher: Optical Society of America

PY - 2002/2

Y1 - 2002/2

N2 - An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si0.7Ge0.3 device is capable of room-temperature operation and has a response time of less than 300 ps.

AB - An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si0.7Ge0.3 device is capable of room-temperature operation and has a response time of less than 300 ps.

U2 - 10.1364/OL.27.000219

DO - 10.1364/OL.27.000219

M3 - Article (Academic Journal)

VL - 27 (4)

SP - 219

EP - 221

JO - Optics Letters

JF - Optics Letters

SN - 0146-9592

ER -