Abstract
An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si0.7Ge0.3 device is capable of room-temperature operation and has a response time of less than 300 ps.
| Translated title of the contribution | Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers |
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| Original language | English |
| Pages (from-to) | 219 - 221 |
| Number of pages | 3 |
| Journal | Optics Letters |
| Volume | 27 (4) |
| DOIs | |
| Publication status | Published - Feb 2002 |