TY - JOUR
T1 - Enhancement of valence band mixing in individual InAs/GaAs quantum dots by rapid thermal annealing
AU - Harbord, Edmund
AU - Ota, Yasutomo
AU - Igarashi, Yuichi
AU - Shirane, Masayuki
AU - Kumagai, Naoto
AU - Ohkouchi, Shunsuke
AU - Iwamoto, Satoshi
AU - Yorozu, Shinichi
AU - Arakawa, Yasuhiko
PY - 2013/12
Y1 - 2013/12
N2 - We measure polarization resolved photoluminescence from excitonic complexes in tens of single InAs/GaAs quantum dots (QDs) over a wide range of energies in two samples: one as-grown, the other subjected to rapid thermal annealing (RTA). Using the linear polarization of the X+ emission as a probe of the valence band mixing (VBM), we find that RTA enhances QD VBM, attributed to the increase in QD height. We complement our measurements with 8-band k · p calculations, which suggest the increase in height on annealing is responsible for this enhancement.
AB - We measure polarization resolved photoluminescence from excitonic complexes in tens of single InAs/GaAs quantum dots (QDs) over a wide range of energies in two samples: one as-grown, the other subjected to rapid thermal annealing (RTA). Using the linear polarization of the X+ emission as a probe of the valence band mixing (VBM), we find that RTA enhances QD VBM, attributed to the increase in QD height. We complement our measurements with 8-band k · p calculations, which suggest the increase in height on annealing is responsible for this enhancement.
UR - http://www.scopus.com/inward/record.url?scp=84892386373&partnerID=8YFLogxK
U2 - 10.7567/JJAP.52.125001
DO - 10.7567/JJAP.52.125001
M3 - Article (Academic Journal)
AN - SCOPUS:84892386373
SN - 0021-4922
VL - 52
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 12
M1 - 125001
ER -