Enhancement of valence band mixing in individual InAs/GaAs quantum dots by rapid thermal annealing

Edmund Harbord; Yasutomo Ota; Yuichi Igarashi; Masayuki Shirane; Naoto Kumagai; Shunsuke Ohkouchi; Satoshi Iwamoto; Shinichi Yorozu; Yasuhiko Arakawa

doi:10.7567/JJAP.52.125001

Enhancement of valence band mixing in individual InAs/GaAs quantum dots by rapid thermal annealing

Edmund Harbord^*
, Yasutomo Ota
, Yuichi Igarashi
, Masayuki Shirane
, Naoto Kumagai
, Shunsuke Ohkouchi
, Satoshi Iwamoto
, Shinichi Yorozu
, Yasuhiko Arakawa

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

9 Citations (Scopus)

Abstract

We measure polarization resolved photoluminescence from excitonic complexes in tens of single InAs/GaAs quantum dots (QDs) over a wide range of energies in two samples: one as-grown, the other subjected to rapid thermal annealing (RTA). Using the linear polarization of the X⁺ emission as a probe of the valence band mixing (VBM), we find that RTA enhances QD VBM, attributed to the increase in QD height. We complement our measurements with 8-band k · p calculations, which suggest the increase in height on annealing is responsible for this enhancement.

Original language	English
Article number	125001
Journal	Japanese Journal of Applied Physics
Volume	52
Issue number	12
DOIs	https://doi.org/10.7567/JJAP.52.125001
Publication status	Published - Dec 2013

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Photonics and Quantum

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title = "Enhancement of valence band mixing in individual InAs/GaAs quantum dots by rapid thermal annealing",

abstract = "We measure polarization resolved photoluminescence from excitonic complexes in tens of single InAs/GaAs quantum dots (QDs) over a wide range of energies in two samples: one as-grown, the other subjected to rapid thermal annealing (RTA). Using the linear polarization of the X+ emission as a probe of the valence band mixing (VBM), we find that RTA enhances QD VBM, attributed to the increase in QD height. We complement our measurements with 8-band k · p calculations, which suggest the increase in height on annealing is responsible for this enhancement.",

author = "Edmund Harbord and Yasutomo Ota and Yuichi Igarashi and Masayuki Shirane and Naoto Kumagai and Shunsuke Ohkouchi and Satoshi Iwamoto and Shinichi Yorozu and Yasuhiko Arakawa",

year = "2013",

month = dec,

doi = "10.7567/JJAP.52.125001",

language = "English",

volume = "52",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics Publishing",

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TY - JOUR

T1 - Enhancement of valence band mixing in individual InAs/GaAs quantum dots by rapid thermal annealing

AU - Harbord, Edmund

AU - Ota, Yasutomo

AU - Igarashi, Yuichi

AU - Shirane, Masayuki

AU - Kumagai, Naoto

AU - Ohkouchi, Shunsuke

AU - Iwamoto, Satoshi

AU - Yorozu, Shinichi

AU - Arakawa, Yasuhiko

PY - 2013/12

Y1 - 2013/12

N2 - We measure polarization resolved photoluminescence from excitonic complexes in tens of single InAs/GaAs quantum dots (QDs) over a wide range of energies in two samples: one as-grown, the other subjected to rapid thermal annealing (RTA). Using the linear polarization of the X+ emission as a probe of the valence band mixing (VBM), we find that RTA enhances QD VBM, attributed to the increase in QD height. We complement our measurements with 8-band k · p calculations, which suggest the increase in height on annealing is responsible for this enhancement.

AB - We measure polarization resolved photoluminescence from excitonic complexes in tens of single InAs/GaAs quantum dots (QDs) over a wide range of energies in two samples: one as-grown, the other subjected to rapid thermal annealing (RTA). Using the linear polarization of the X+ emission as a probe of the valence band mixing (VBM), we find that RTA enhances QD VBM, attributed to the increase in QD height. We complement our measurements with 8-band k · p calculations, which suggest the increase in height on annealing is responsible for this enhancement.

UR - https://www.scopus.com/pages/publications/84892386373

U2 - 10.7567/JJAP.52.125001

DO - 10.7567/JJAP.52.125001

M3 - Article (Academic Journal)

AN - SCOPUS:84892386373

SN - 0021-4922

VL - 52

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12

M1 - 125001

ER -

Enhancement of valence band mixing in individual InAs/GaAs quantum dots by rapid thermal annealing

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