Enhancing the electron mobility via delta-doping in SrTiO3

Y. Kozuka*, M. Kim, H. Ohta, Y. Hikita, C. Bell, H. Y. Hwang, Chris Bell

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

55 Citations (Scopus)


We fabricated high-mobility delta-doped structures in SrTiO3 thin films in order to investigate the low temperature electronic transport properties of confined carriers in this system. An enhancement of the electron mobility above the bulk value was observed as the doped layer thickness decreased. High-field Hall measurements revealed that this mobility enhancement originates from higher-mobility electrons in the undoped clean regions, which have quantum-mechanically broadened from the doped layer. Because of the absence of apparent lattice misfit between the layers, this structure is highly suitable for investigating two-dimensional electron gases in SrTiO3. (C) 2010 American Institute of Physics. [doi:10.1063/1.3524198]

Original languageEnglish
Article number222115
Number of pages3
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 29 Nov 2010


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