Epitaxial Growth of (−201) β-Ga2O3 on (001) Diamond Substrates

Arpit Nandi; David Cherns; Indraneel Sanyal; Martin H H Kuball

doi:10.1021/acs.cgd.3c00972

Epitaxial Growth of (−201) β-Ga₂O₃ on (001) Diamond Substrates

Arpit Nandi, David Cherns, Indraneel Sanyal, Martin H H Kuball^*

^*Corresponding author for this work

Research output: Contribution to journal › Article (Academic Journal) › peer-review

18 Citations (Scopus)

Abstract

Heteroepitaxial growth of β-Ga₂O₃ on (001) diamond by metal–organic chemical vapor deposition (MOCVD) is reported. A detailed study was performed with Transmission Electron Microscopy (TEM) elucidating the epitaxial relation of (−201) β-Ga₂O₃||(001) diamond and [010]/[−13–2] β-Ga₂O₃ ||[110]/[1–10] diamond, with the presence of different crystallographically related epitaxial variants apparent from selected area diffraction patterns. A model explaining the arrangement of atoms along ⟨110⟩ diamond is demonstrated with a lattice mismatch of 1.03–3.66% in the perpendicular direction. Dark field imaging showed evidence of arrays of discrete defects at the boundaries between different grains. Strategies to reduce the density of defects are discussed.

Original language	English
Pages (from-to)	8290−8295
Number of pages	6
Journal	Crystal Growth & Design
Volume	23
Issue number	11
Early online date	16 Oct 2023
DOIs	https://doi.org/10.1021/acs.cgd.3c00972
Publication status	Published - 1 Nov 2023

Research Groups and Themes

CDTR

Keywords

Carbon
Diffraction
Epitaxy
Grain
Thin films

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Cite this

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title = "Epitaxial Growth of (−201) β-Ga2O3 on (001) Diamond Substrates",

abstract = "Heteroepitaxial growth of β-Ga2O3 on (001) diamond by metal–organic chemical vapor deposition (MOCVD) is reported. A detailed study was performed with Transmission Electron Microscopy (TEM) elucidating the epitaxial relation of (−201) β-Ga2O3||(001) diamond and [010]/[−13–2] β-Ga2O3 ||[110]/[1–10] diamond, with the presence of different crystallographically related epitaxial variants apparent from selected area diffraction patterns. A model explaining the arrangement of atoms along ⟨110⟩ diamond is demonstrated with a lattice mismatch of 1.03–3.66% in the perpendicular direction. Dark field imaging showed evidence of arrays of discrete defects at the boundaries between different grains. Strategies to reduce the density of defects are discussed.",

keywords = "Carbon, Diffraction, Epitaxy, Grain, Thin films",

author = "Arpit Nandi and David Cherns and Indraneel Sanyal and Kuball, {Martin H H}",

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doi = "10.1021/acs.cgd.3c00972",

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TY - JOUR

T1 - Epitaxial Growth of (−201) β-Ga2O3 on (001) Diamond Substrates

AU - Nandi, Arpit

AU - Cherns, David

AU - Sanyal, Indraneel

AU - Kuball, Martin H H

PY - 2023/11/1

Y1 - 2023/11/1

N2 - Heteroepitaxial growth of β-Ga2O3 on (001) diamond by metal–organic chemical vapor deposition (MOCVD) is reported. A detailed study was performed with Transmission Electron Microscopy (TEM) elucidating the epitaxial relation of (−201) β-Ga2O3||(001) diamond and [010]/[−13–2] β-Ga2O3 ||[110]/[1–10] diamond, with the presence of different crystallographically related epitaxial variants apparent from selected area diffraction patterns. A model explaining the arrangement of atoms along ⟨110⟩ diamond is demonstrated with a lattice mismatch of 1.03–3.66% in the perpendicular direction. Dark field imaging showed evidence of arrays of discrete defects at the boundaries between different grains. Strategies to reduce the density of defects are discussed.

AB - Heteroepitaxial growth of β-Ga2O3 on (001) diamond by metal–organic chemical vapor deposition (MOCVD) is reported. A detailed study was performed with Transmission Electron Microscopy (TEM) elucidating the epitaxial relation of (−201) β-Ga2O3||(001) diamond and [010]/[−13–2] β-Ga2O3 ||[110]/[1–10] diamond, with the presence of different crystallographically related epitaxial variants apparent from selected area diffraction patterns. A model explaining the arrangement of atoms along ⟨110⟩ diamond is demonstrated with a lattice mismatch of 1.03–3.66% in the perpendicular direction. Dark field imaging showed evidence of arrays of discrete defects at the boundaries between different grains. Strategies to reduce the density of defects are discussed.

KW - Carbon

KW - Diffraction

KW - Epitaxy

KW - Grain

KW - Thin films

U2 - 10.1021/acs.cgd.3c00972

DO - 10.1021/acs.cgd.3c00972

M3 - Article (Academic Journal)

C2 - 37937192

VL - 23

SP - 8290−8295

JO - Crystal Growth & Design

JF - Crystal Growth & Design

IS - 11

ER -