Error detection and correction in content addressable memories

S. Pontarelli*, M. Ottavi, A. Salsano

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

8 Citations (Scopus)

Abstract

A Content Addressable Memory (CAM) is an SRAM based memory which can be accessed in parallel in order to search for a given search word, providing as result the address of the matching data. The use of CAM is widespread in many applications ranging from the controller of a CPU memory cache to the implementation of lookup tables of high speed routers. Like conventional memories, CAM can be affected by the occurrence of Single Event Upsets (SEU) which can alter its operation causing different effects such as pseudo-HIT or pseudo-MISS events. In order to avoid the effects of SEUs different approaches have been proposed in previous literature, but all of these solutions require changes to the internal structure of the CAM itself. Differently from previous approaches, in this paper we propose a method that does not require any modification to a CAM's internal structure and therefore can be easily applied at system level, using a suitable redundant CAM component in order to obtain a CAM module with error detection and correction capabilities.

Original languageEnglish
Title of host publicationProceedings - IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems
Pages420-428
Number of pages9
DOIs
Publication statusPublished - 1 Dec 2010
Event2010 25th International Symposium on Defect and Fault Tolerance in VLSI Systems, DFT 2010 - Kyoto, United Kingdom
Duration: 6 Oct 20108 Oct 2010

Conference

Conference2010 25th International Symposium on Defect and Fault Tolerance in VLSI Systems, DFT 2010
CountryUnited Kingdom
CityKyoto
Period6/10/108/10/10

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