Abstract
Summary form only given. There has been a significant amount of study world-wide on etching PBG structures into both VCSELs and edge-emitting lasers. The results of experiments etching PBGs structures into the DBRs of GaAs-based proton-implanted and oxide confined VCSELs using focussed ion beam etching (FIBE) are presented. The results of etching a small section of a PBG lattice on either side of the ridge waveguide in an edge-emitting laser are also be presented. A side mode suppression ratio improvement of 40dB has been observed through this technique. This has been modelled using a finite difference time domain model to understand if this is indeed a PBG effect
| Translated title of the contribution | Etched lattice effects in edge-emitters and VCSELs - PBG effects or not? |
|---|---|
| Original language | English |
| Title of host publication | 2003 International Conference on Transparent Optical Networks (ICTON 2003), Poland |
| DOIs | |
| Publication status | Published - 29 Jun 2003 |
Research Groups and Themes
- Photonics and Quantum
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