Evaluation of commercial GaN HEMTs for pulsed power applications

F Fornetti; KA Morris; MA Beach

Evaluation of commercial GaN HEMTs for pulsed power applications

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Abstract

The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc. The output power variation at pulse repetition frequencies (PRFs) in the range 100-450 kHz is presented. Rise and fall times are also investigated at different PRFs and power levels. The pulsed RF waveforms are obtained by switching the gate bias of the transistor on and completely off to ensure that the device goes through full transients for every pulse. The RF frequency at which the study is conducted is 3.5GHz. The aim of the study is to assess the suitability of commercial GaN HEMTs to pulsed RF applications such as Radar.

Translated title of the contribution	Evaluation of commercial GaN HEMTS for pulsed power applications
Original language	English
Title of host publication	IET European Pulsed Power Conference, 2009, Geneva, Switzerland
Publisher	Institution of Engineering and Technology (IET)
Pages	1 - 4
Number of pages	4
ISBN (Print)	9781849191449
Publication status	Published - Sept 2009
Event	IET European Pulsed Power Conference - Geneva, Switzerland Duration: 1 Sept 2009 → …

Conference

Conference	IET European Pulsed Power Conference
Country/Territory	Switzerland
City	Geneva
Period	1/09/09 → …

Bibliographical note

Rose publication type: Conference contribution

Sponsorship: This work has been partially supported by MBDA.

Keywords

GaN
power amplifiers
HEMTs
pulsed RF
radar

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Conference posterAccepted author manuscript, 23.7 MB

http://hdl.handle.net/1983/1573

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@inproceedings{d09a948890754c9b84f87a1b387e638f,

title = "Evaluation of commercial GaN HEMTs for pulsed power applications",

abstract = "The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc. The output power variation at pulse repetition frequencies (PRFs) in the range 100-450 kHz is presented. Rise and fall times are also investigated at different PRFs and power levels. The pulsed RF waveforms are obtained by switching the gate bias of the transistor on and completely off to ensure that the device goes through full transients for every pulse. The RF frequency at which the study is conducted is 3.5GHz. The aim of the study is to assess the suitability of commercial GaN HEMTs to pulsed RF applications such as Radar.",

keywords = "GaN, power amplifiers, HEMTs, pulsed RF, radar",

author = "F Fornetti and KA Morris and MA Beach",

note = "Rose publication type: Conference contribution Sponsorship: This work has been partially supported by MBDA. ; IET European Pulsed Power Conference ; Conference date: 01-09-2009",

year = "2009",

month = sep,

language = "English",

isbn = "9781849191449",

pages = "1 -- 4",

booktitle = "IET European Pulsed Power Conference, 2009, Geneva, Switzerland",

publisher = "Institution of Engineering and Technology (IET)",

address = "United Kingdom",

}

TY - GEN

T1 - Evaluation of commercial GaN HEMTs for pulsed power applications

AU - Fornetti, F

AU - Morris, KA

AU - Beach, MA

N1 - Rose publication type: Conference contribution Sponsorship: This work has been partially supported by MBDA.

PY - 2009/9

Y1 - 2009/9

N2 - The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc. The output power variation at pulse repetition frequencies (PRFs) in the range 100-450 kHz is presented. Rise and fall times are also investigated at different PRFs and power levels. The pulsed RF waveforms are obtained by switching the gate bias of the transistor on and completely off to ensure that the device goes through full transients for every pulse. The RF frequency at which the study is conducted is 3.5GHz. The aim of the study is to assess the suitability of commercial GaN HEMTs to pulsed RF applications such as Radar.

AB - The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc. The output power variation at pulse repetition frequencies (PRFs) in the range 100-450 kHz is presented. Rise and fall times are also investigated at different PRFs and power levels. The pulsed RF waveforms are obtained by switching the gate bias of the transistor on and completely off to ensure that the device goes through full transients for every pulse. The RF frequency at which the study is conducted is 3.5GHz. The aim of the study is to assess the suitability of commercial GaN HEMTs to pulsed RF applications such as Radar.

KW - GaN

KW - power amplifiers

KW - HEMTs

KW - pulsed RF

KW - radar

M3 - Conference Contribution (Conference Proceeding)

SN - 9781849191449

SP - 1

EP - 4

BT - IET European Pulsed Power Conference, 2009, Geneva, Switzerland

PB - Institution of Engineering and Technology (IET)

T2 - IET European Pulsed Power Conference

Y2 - 1 September 2009

ER -

Evaluation of commercial GaN HEMTs for pulsed power applications

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Keywords

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