Evaluation of commercial GaN HEMTs for pulsed power applications

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Abstract

The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc. The output power variation at pulse repetition frequencies (PRFs) in the range 100-450 kHz is presented. Rise and fall times are also investigated at different PRFs and power levels. The pulsed RF waveforms are obtained by switching the gate bias of the transistor on and completely off to ensure that the device goes through full transients for every pulse. The RF frequency at which the study is conducted is 3.5GHz. The aim of the study is to assess the suitability of commercial GaN HEMTs to pulsed RF applications such as Radar.
Original languageEnglish
Title of host publicationIET European Pulsed Power Conference, 2009, Geneva, Switzerland
PublisherInstitution of Engineering and Technology (IET)
Pages1 - 4
Number of pages4
ISBN (Print)9781849191449
Publication statusPublished - Sep 2009
EventIET European Pulsed Power Conference - Geneva, Switzerland
Duration: 1 Sep 2009 → …

Conference

ConferenceIET European Pulsed Power Conference
CountrySwitzerland
CityGeneva
Period1/09/09 → …

Bibliographical note

Rose publication type: Conference contribution

Sponsorship: This work has been partially supported by MBDA.

Keywords

  • GaN
  • power amplifiers
  • HEMTs
  • pulsed RF
  • radar

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    Fornetti, F., Morris, KA., & Beach, MA. (2009). Evaluation of commercial GaN HEMTs for pulsed power applications. In IET European Pulsed Power Conference, 2009, Geneva, Switzerland (pp. 1 - 4). Institution of Engineering and Technology (IET). http://hdl.handle.net/1983/1573