Evaluation of Pulsed I-V Analysis as Validation Tool of Nonlinear RF Models of GaN-Based HFETs

Hassan Hirshy*, Manikant Singh, Michael A. Casbon, Richard M. Perks, Michael J. Uren, Trevor Martin, Martin Kuball, Paul J. Tasker

*Corresponding author for this work

Research output: Contribution to journalArticle (Academic Journal)peer-review

8 Citations (Scopus)
248 Downloads (Pure)

Abstract

This paper evaluates the applicability of pulsed I-V measurements as a tool for accurately extracting nonlinear gallium nitride (GaN)-based heterojunction field-effect transistor (HFET) models. Two wafers with the identical layer structure but different growth conditions have been investigated. A series of I-V measurements was performed under dc and pulsed conditions demonstrating a dramatic difference in the kink effect and current collapse (knee walkout) suggesting different trapping behaviors. However, when radio frequency (RF) I-V waveform measurements, utilizing active harmonic load-pull, were used to study the impact of these traps on the RF performance, both wafers gave good overall RF performance with no significant difference observed. This absence of correlation between pulsed I-V measurement results and RF performance raises a question about the applicability of pulsed I-V measurements alone as a tool for extracting nonlinear device models in the case of GaN HFETs.

Original languageEnglish
Article number8494785
Pages (from-to)5307-5313
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume65
Issue number12
Early online date17 Oct 2018
DOIs
Publication statusPublished - Dec 2018

Structured keywords

  • CDTR

Keywords

  • Active harmonic load-pull
  • current collapse
  • gallium nitride (GaN)
  • heterojunction field-effect transistor (HFET)
  • high-electron mobility transistor
  • kink effect
  • knee walkout
  • pulsed I-V
  • trapping effect

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