Evaluation of the off-State Base-Emitter Voltage Requirement of the SiC BJT With a Regenerative Proportional Base Driver Circuit and Their Application in an Inverter

J N Mcneill, Bosen Jin, Xibo Yuan, Ian Laird

Research output: Contribution to journalArticle (Academic Journal)

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Abstract

A strong candidate device for use in high-efficiency and high-density power converters is the SiC bipolar junction transistor, which requires a continuous gate (base) current to maintain its on-state. A base driver circuit with regenerative collector current feedback using a current transformer, and a negative off-state base-emitter voltage is presented in this article. The off-state base-emitter voltage required to prevent simultaneous conduction of a commercially available device when subjected to dv/dt's is assessed. The device is then utilized in a three-phase dc-to-ac power converter where the efficacy of using the proposed base driver is evaluated. The off-state base-emitter voltage used is informed by the dv/dt tests. The converter is supplied from a 600-V dc rail, switches at 50 kHz and supplies a 4.1-kW load at a modulation index of 0.9. An efficiency of 97.4% was measured.
Original languageEnglish
Pages (from-to)7179 - 7189
Number of pages11
JournalIEEE Transactions on Industrial Electronics
Volume67
Issue number9
Early online date26 Sep 2019
DOIs
Publication statusPublished - 1 Sep 2020

Bibliographical note

The acceptance date for this record is provisional and based upon the month of publication for the article.

Keywords

  • Silicon carbide
  • Driver circuits
  • Logic gates
  • Integrated circuits
  • Current transformers
  • Silicon
  • MOSFET
  • Base driver
  • d $v$ /d $t$
  • power converter
  • SiC bipolar junction transistor (BJT)
  • simultaneous conduction

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