Evaluation of the off-State Base-Emitter Voltage Requirement of the SiC BJT With a Regenerative Proportional Base Driver Circuit and Their Application in an Inverter

J N Mcneill; Bosen Jin; Xibo Yuan; Ian Laird

doi:10.1109/TIE.2019.2938492

Evaluation of the off-State Base-Emitter Voltage Requirement of the SiC BJT With a Regenerative Proportional Base Driver Circuit and Their Application in an Inverter

J N Mcneill
, Bosen Jin
, Xibo Yuan
, Ian Laird

Research output: Contribution to journal › Article (Academic Journal) › peer-review

4 Citations (Scopus)

124 Downloads (Pure)

Abstract

A strong candidate device for use in high-efficiency and high-density power converters is the SiC bipolar junction transistor, which requires a continuous gate (base) current to maintain its on-state. A base driver circuit with regenerative collector current feedback using a current transformer, and a negative off-state base-emitter voltage is presented in this article. The off-state base-emitter voltage required to prevent simultaneous conduction of a commercially available device when subjected to dv/dt's is assessed. The device is then utilized in a three-phase dc-to-ac power converter where the efficacy of using the proposed base driver is evaluated. The off-state base-emitter voltage used is informed by the dv/dt tests. The converter is supplied from a 600-V dc rail, switches at 50 kHz and supplies a 4.1-kW load at a modulation index of 0.9. An efficiency of 97.4% was measured.

Original language	English
Pages (from-to)	7179 - 7189
Number of pages	11
Journal	IEEE Transactions on Industrial Electronics
Volume	67
Issue number	9
Early online date	26 Sept 2019
DOIs	https://doi.org/10.1109/TIE.2019.2938492
Publication status	Published - 1 Sept 2020

Bibliographical note

The acceptance date for this record is provisional and based upon the month of publication for the article.

Keywords

Silicon carbide
Driver circuits
Logic gates
Integrated circuits
Current transformers
Silicon
MOSFET
Base driver
d $v$ /d $t$
power converter
SiC bipolar junction transistor (BJT)
simultaneous conduction

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title = "Evaluation of the off-State Base-Emitter Voltage Requirement of the SiC BJT With a Regenerative Proportional Base Driver Circuit and Their Application in an Inverter",

abstract = "A strong candidate device for use in high-efficiency and high-density power converters is the SiC bipolar junction transistor, which requires a continuous gate (base) current to maintain its on-state. A base driver circuit with regenerative collector current feedback using a current transformer, and a negative off-state base-emitter voltage is presented in this article. The off-state base-emitter voltage required to prevent simultaneous conduction of a commercially available device when subjected to dv/dt's is assessed. The device is then utilized in a three-phase dc-to-ac power converter where the efficacy of using the proposed base driver is evaluated. The off-state base-emitter voltage used is informed by the dv/dt tests. The converter is supplied from a 600-V dc rail, switches at 50 kHz and supplies a 4.1-kW load at a modulation index of 0.9. An efficiency of 97.4\% was measured.",

keywords = "Silicon carbide, Driver circuits, Logic gates, Integrated circuits, Current transformers, Silicon, MOSFET, Base driver, d \$v\$ /d \$t\$, power converter, SiC bipolar junction transistor (BJT), simultaneous conduction",

author = "Mcneill, \{J N\} and Bosen Jin and Xibo Yuan and Ian Laird",

note = "The acceptance date for this record is provisional and based upon the month of publication for the article. ",

year = "2020",

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day = "1",

doi = "10.1109/TIE.2019.2938492",

language = "English",

volume = "67",

pages = "7179 -- 7189",

journal = "IEEE Transactions on Industrial Electronics",

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}

Evaluation of the off-State Base-Emitter Voltage Requirement of the SiC BJT With a Regenerative Proportional Base Driver Circuit and Their Application in an Inverter. / Mcneill, J N; Jin, Bosen; Yuan, Xibo et al.
In: IEEE Transactions on Industrial Electronics, Vol. 67, No. 9, 01.09.2020, p. 7179 - 7189.

Research output: Contribution to journal › Article (Academic Journal) › peer-review

TY - JOUR

T1 - Evaluation of the off-State Base-Emitter Voltage Requirement of the SiC BJT With a Regenerative Proportional Base Driver Circuit and Their Application in an Inverter

AU - Mcneill, J N

AU - Jin, Bosen

AU - Yuan, Xibo

AU - Laird, Ian

N1 - The acceptance date for this record is provisional and based upon the month of publication for the article.

PY - 2020/9/1

Y1 - 2020/9/1

N2 - A strong candidate device for use in high-efficiency and high-density power converters is the SiC bipolar junction transistor, which requires a continuous gate (base) current to maintain its on-state. A base driver circuit with regenerative collector current feedback using a current transformer, and a negative off-state base-emitter voltage is presented in this article. The off-state base-emitter voltage required to prevent simultaneous conduction of a commercially available device when subjected to dv/dt's is assessed. The device is then utilized in a three-phase dc-to-ac power converter where the efficacy of using the proposed base driver is evaluated. The off-state base-emitter voltage used is informed by the dv/dt tests. The converter is supplied from a 600-V dc rail, switches at 50 kHz and supplies a 4.1-kW load at a modulation index of 0.9. An efficiency of 97.4% was measured.

AB - A strong candidate device for use in high-efficiency and high-density power converters is the SiC bipolar junction transistor, which requires a continuous gate (base) current to maintain its on-state. A base driver circuit with regenerative collector current feedback using a current transformer, and a negative off-state base-emitter voltage is presented in this article. The off-state base-emitter voltage required to prevent simultaneous conduction of a commercially available device when subjected to dv/dt's is assessed. The device is then utilized in a three-phase dc-to-ac power converter where the efficacy of using the proposed base driver is evaluated. The off-state base-emitter voltage used is informed by the dv/dt tests. The converter is supplied from a 600-V dc rail, switches at 50 kHz and supplies a 4.1-kW load at a modulation index of 0.9. An efficiency of 97.4% was measured.

KW - Silicon carbide

KW - Driver circuits

KW - Logic gates

KW - Integrated circuits

KW - Current transformers

KW - Silicon

KW - MOSFET

KW - Base driver

KW - d $v$ /d $t$

KW - power converter

KW - SiC bipolar junction transistor (BJT)

KW - simultaneous conduction

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DO - 10.1109/TIE.2019.2938492

M3 - Article (Academic Journal)

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EP - 7189

JO - IEEE Transactions on Industrial Electronics

JF - IEEE Transactions on Industrial Electronics

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ER -

Evaluation of the off-State Base-Emitter Voltage Requirement of the SiC BJT With a Regenerative Proportional Base Driver Circuit and Their Application in an Inverter

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Keywords

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