Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier

N Killat; M Tapajna; M Faqir; T Palacios; M Kuball

doi:10.1049/el.2010.7540

Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier

N Killat
, M Tapajna
, M Faqir
, T Palacios
, M Kuball

School of Physics

Research output: Contribution to journal › Article (Academic Journal) › peer-review

34 Citations (Scopus)

Abstract

Electroluminescence (EL) spectroscopy in combination with drift-diffusion simulations was used to prove the presence of impact ionisation in AlGaN/GaN HEMTs illustrated on InGaN back-barrier devices. Regardless of the level of gate leakage current, which is dominated by contributions such as surface leakage current and others, EL enabled the revealing of hole generation due to impact ionisation. Hole currents as low as 10pA were detectable by the optical technique used.

Translated title of the contribution	Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier
Original language	English
Pages (from-to)	405 - 405
Number of pages	1
Journal	Electronics Letters
Volume	47
DOIs	https://doi.org/10.1049/el.2010.7540
Publication status	Published - May 2011

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@article{1eac69f0b1b741129d827fdc4710e394,

title = "Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier",

abstract = "Electroluminescence (EL) spectroscopy in combination with drift-diffusion simulations was used to prove the presence of impact ionisation in AlGaN/GaN HEMTs illustrated on InGaN back-barrier devices. Regardless of the level of gate leakage current, which is dominated by contributions such as surface leakage current and others, EL enabled the revealing of hole generation due to impact ionisation. Hole currents as low as 10pA were detectable by the optical technique used.",

author = "N Killat and M Tapajna and M Faqir and T Palacios and M Kuball",

year = "2011",

month = may,

doi = "10.1049/el.2010.7540",

language = "English",

volume = "47",

pages = "405 -- 405",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons, Inc",

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TY - JOUR

T1 - Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier

AU - Killat, N

AU - Tapajna, M

AU - Faqir, M

AU - Palacios, T

AU - Kuball, M

PY - 2011/5

Y1 - 2011/5

N2 - Electroluminescence (EL) spectroscopy in combination with drift-diffusion simulations was used to prove the presence of impact ionisation in AlGaN/GaN HEMTs illustrated on InGaN back-barrier devices. Regardless of the level of gate leakage current, which is dominated by contributions such as surface leakage current and others, EL enabled the revealing of hole generation due to impact ionisation. Hole currents as low as 10pA were detectable by the optical technique used.

AB - Electroluminescence (EL) spectroscopy in combination with drift-diffusion simulations was used to prove the presence of impact ionisation in AlGaN/GaN HEMTs illustrated on InGaN back-barrier devices. Regardless of the level of gate leakage current, which is dominated by contributions such as surface leakage current and others, EL enabled the revealing of hole generation due to impact ionisation. Hole currents as low as 10pA were detectable by the optical technique used.

U2 - 10.1049/el.2010.7540

DO - 10.1049/el.2010.7540

M3 - Article (Academic Journal)

SN - 0013-5194

VL - 47

SP - 405

EP - 405

JO - Electronics Letters

JF - Electronics Letters

ER -

Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier

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