Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications

S Mookerjea; A Liu; S Datta; D Mohata; R Krishnan; Jawar Singh; A Vallett; Aman Ali; T Mayer; V Narayanan; D Schlom

Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications

S Mookerjea, A Liu, S Datta, D Mohata, R Krishnan, Jawar Singh, A Vallett, Aman Ali, T Mayer, V Narayanan, D Schlom

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

101 Citations (Scopus)

Translated title of the contribution	Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications
Original language	English
Title of host publication	To appear in the proceedings of IEEE International Electron Devices Meeting (IEDM), December, Baltimore, 2009
Publication status	Published - 2009

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Other page information: -
Conference Proceedings/Title of Journal: To appear in the proceedings of IEEE International Electron Devices Meeting (IEDM), December, Baltimore, 2009
Other identifier: 2001096

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Mookerjea, S., Liu, A., Datta, S., Mohata, D., Krishnan, R., Singh, J., Vallett, A., Ali, A., Mayer, T., Narayanan, V., & Schlom, D. (2009). Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications. In To appear in the proceedings of IEEE International Electron Devices Meeting (IEDM), December, Baltimore, 2009 http://www.cs.bris.ac.uk/Publications/pub_master.jsp?id=2001096

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title = "Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications",

author = "S Mookerjea and A Liu and S Datta and D Mohata and R Krishnan and Jawar Singh and A Vallett and Aman Ali and T Mayer and V Narayanan and D Schlom",

note = "Other page information: - Conference Proceedings/Title of Journal: To appear in the proceedings of IEEE International Electron Devices Meeting (IEDM), December, Baltimore, 2009 Other identifier: 2001096",

year = "2009",

language = "English",

booktitle = "To appear in the proceedings of IEEE International Electron Devices Meeting (IEDM), December, Baltimore, 2009",

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Mookerjea, S, Liu, A, Datta, S, Mohata, D, Krishnan, R, Singh, J, Vallett, A, Ali, A, Mayer, T, Narayanan, V & Schlom, D 2009, Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications. in To appear in the proceedings of IEEE International Electron Devices Meeting (IEDM), December, Baltimore, 2009. <http://www.cs.bris.ac.uk/Publications/pub_master.jsp?id=2001096>

Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications. / Mookerjea, S; Liu, A; Datta, S et al.
To appear in the proceedings of IEEE International Electron Devices Meeting (IEDM), December, Baltimore, 2009. 2009.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications

AU - Mookerjea, S

AU - Liu, A

AU - Datta, S

AU - Mohata, D

AU - Krishnan, R

AU - Singh, Jawar

AU - Vallett, A

AU - Ali, Aman

AU - Mayer, T

AU - Narayanan, V

AU - Schlom, D

N1 - Other page information: - Conference Proceedings/Title of Journal: To appear in the proceedings of IEEE International Electron Devices Meeting (IEDM), December, Baltimore, 2009 Other identifier: 2001096

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M3 - Conference Contribution (Conference Proceeding)

BT - To appear in the proceedings of IEEE International Electron Devices Meeting (IEDM), December, Baltimore, 2009

ER -