Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications

S Mookerjea, A Liu, S Datta, D Mohata, R Krishnan, Jawar Singh, A Vallett, A Ali, T Mayer, V Narayanan, D Schlom

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

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Translated title of the contributionExperimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications
Original languageEnglish
Title of host publicationTo appear in the proceedings of IEEE International Electron Devices Meeting (IEDM), December, Baltimore, 2009
Publication statusPublished - 2009

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Other page information: -
Conference Proceedings/Title of Journal: To appear in the proceedings of IEEE International Electron Devices Meeting (IEDM), December, Baltimore, 2009
Other identifier: 2001096

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