Experimental study of temperature sensitivity of carrier lifetime and recombination coefficients in GaInNAs SQW lasers

P Pozo, JM Rorison, P Ivanov, Y Qiu

Research output: Chapter in Book/Report/Conference proceedingConference Contribution (Conference Proceeding)

2 Citations (Scopus)

Abstract

This paper deals with the characterization of the differential carrier lifetime and the calculation of the monomolecular, radiative and non-radiative recombination coefficients and their temperature dependence as an evidence of the excellent temperature performance of this material system. The device characterized is a 1.25 μm GaInNAs laser structure grown on a GaAs substrate. The active region consists of a single 6 nm thick single quantum well. Light current (L-I) characteristics performed over a temperature range of 20°C to 80°C, show a characteristic temperature of 50 K. Similar than in the case of commercial InGaAs. Good temperature performance of optical gain using Hakki-Paoli method, lasing wavelength and efficiency will also be presented and compared with modelling work
Translated title of the contributionExperimental study of temperature sensitivity of carrier lifetime and recombination coefficients in GaInNAs SQW lasers
Original languageEnglish
Title of host publication2005 Conference on Lasers and Electro-Optics Europe
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages303 - 303
Number of pages1
ISBN (Print)0780389743
DOIs
Publication statusPublished - 12 Jun 2005

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