Experimental study of temperature sensitivity of carrier lifetime and recombination coefficients in GaInNAs SQW lasers

P Pozo; JM Rorison; P Ivanov; Y Qiu

doi:10.1109/CLEOE.2005.1568087

Experimental study of temperature sensitivity of carrier lifetime and recombination coefficients in GaInNAs SQW lasers

P Pozo
, JM Rorison
, P Ivanov
, Y Qiu

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

2 Citations (Scopus)

Abstract

This paper deals with the characterization of the differential carrier lifetime and the calculation of the monomolecular, radiative and non-radiative recombination coefficients and their temperature dependence as an evidence of the excellent temperature performance of this material system. The device characterized is a 1.25 μm GaInNAs laser structure grown on a GaAs substrate. The active region consists of a single 6 nm thick single quantum well. Light current (L-I) characteristics performed over a temperature range of 20°C to 80°C, show a characteristic temperature of 50 K. Similar than in the case of commercial InGaAs. Good temperature performance of optical gain using Hakki-Paoli method, lasing wavelength and efficiency will also be presented and compared with modelling work

Translated title of the contribution	Experimental study of temperature sensitivity of carrier lifetime and recombination coefficients in GaInNAs SQW lasers
Original language	English
Title of host publication	2005 Conference on Lasers and Electro-Optics Europe
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	303 - 303
Number of pages	1
ISBN (Print)	0780389743
DOIs	https://doi.org/10.1109/CLEOE.2005.1568087
Publication status	Published - 12 Jun 2005

Research Groups and Themes

Photonics and Quantum

Access to Document

10.1109/CLEOE.2005.1568087

Handle.net

Persistent link

Cite this

@inproceedings{dd6f1a382436478c805b4f6f8e2b5472,

title = "Experimental study of temperature sensitivity of carrier lifetime and recombination coefficients in GaInNAs SQW lasers",

abstract = "This paper deals with the characterization of the differential carrier lifetime and the calculation of the monomolecular, radiative and non-radiative recombination coefficients and their temperature dependence as an evidence of the excellent temperature performance of this material system. The device characterized is a 1.25 μm GaInNAs laser structure grown on a GaAs substrate. The active region consists of a single 6 nm thick single quantum well. Light current (L-I) characteristics performed over a temperature range of 20°C to 80°C, show a characteristic temperature of 50 K. Similar than in the case of commercial InGaAs. Good temperature performance of optical gain using Hakki-Paoli method, lasing wavelength and efficiency will also be presented and compared with modelling work",

author = "P Pozo and JM Rorison and P Ivanov and Y Qiu",

year = "2005",

month = jun,

day = "12",

doi = "10.1109/CLEOE.2005.1568087",

language = "English",

isbn = "0780389743",

pages = "303 -- 303",

booktitle = "2005 Conference on Lasers and Electro-Optics Europe",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

}

Experimental study of temperature sensitivity of carrier lifetime and recombination coefficients in GaInNAs SQW lasers. / Pozo, P; Rorison, JM; Ivanov, P et al.
2005 Conference on Lasers and Electro-Optics Europe. Institute of Electrical and Electronics Engineers (IEEE), 2005. p. 303 - 303.

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

TY - GEN

T1 - Experimental study of temperature sensitivity of carrier lifetime and recombination coefficients in GaInNAs SQW lasers

AU - Pozo, P

AU - Rorison, JM

AU - Ivanov, P

AU - Qiu, Y

PY - 2005/6/12

Y1 - 2005/6/12

N2 - This paper deals with the characterization of the differential carrier lifetime and the calculation of the monomolecular, radiative and non-radiative recombination coefficients and their temperature dependence as an evidence of the excellent temperature performance of this material system. The device characterized is a 1.25 μm GaInNAs laser structure grown on a GaAs substrate. The active region consists of a single 6 nm thick single quantum well. Light current (L-I) characteristics performed over a temperature range of 20°C to 80°C, show a characteristic temperature of 50 K. Similar than in the case of commercial InGaAs. Good temperature performance of optical gain using Hakki-Paoli method, lasing wavelength and efficiency will also be presented and compared with modelling work

AB - This paper deals with the characterization of the differential carrier lifetime and the calculation of the monomolecular, radiative and non-radiative recombination coefficients and their temperature dependence as an evidence of the excellent temperature performance of this material system. The device characterized is a 1.25 μm GaInNAs laser structure grown on a GaAs substrate. The active region consists of a single 6 nm thick single quantum well. Light current (L-I) characteristics performed over a temperature range of 20°C to 80°C, show a characteristic temperature of 50 K. Similar than in the case of commercial InGaAs. Good temperature performance of optical gain using Hakki-Paoli method, lasing wavelength and efficiency will also be presented and compared with modelling work

U2 - 10.1109/CLEOE.2005.1568087

DO - 10.1109/CLEOE.2005.1568087

M3 - Conference Contribution (Conference Proceeding)

SN - 0780389743

SP - 303

EP - 303

BT - 2005 Conference on Lasers and Electro-Optics Europe

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Experimental study of temperature sensitivity of carrier lifetime and recombination coefficients in GaInNAs SQW lasers

Abstract

Research Groups and Themes

Access to Document

Handle.net

Fingerprint

Cite this