Fabrication of InGaAsP double shallow ridge vertical-coupled rectangular ring lasers by a novel cascade etching technique is demonstrated. Varied threshold current dependent on coupling current and single mode operation just beyond the thresholds are observed.
|Translated title of the contribution||Fabrication and characterization of semiconductor rectamgular ring laser with double shallow ridge waveguides and total internal reflection mirrors|
|Title of host publication||IEEE 20th LEOS Annual Meeting, Orlando, FL, USA|
|Pages||258 - 259|
|Number of pages||2|
|Publication status||Published - 21 Oct 2007|