Fabrication of InGaAsP double shallow ridge vertical-coupled rectangular ring lasers by a novel cascade etching technique is demonstrated. Varied threshold current dependent on coupling current and single mode operation just beyond the thresholds are observed.
|Translated title of the contribution
|Fabrication and characterization of semiconductor rectamgular ring laser with double shallow ridge waveguides and total internal reflection mirrors
|Title of host publication
|IEEE 20th LEOS Annual Meeting, Orlando, FL, USA
|258 - 259
|Number of pages
|Published - 21 Oct 2007