Fabrication and characterization of semiconductor rectamgular ring laser with double shallow ridge waveguides and total internal reflection mirrors

R Zhang; Z Ren; S Yu

doi:10.1109/LEOS.2007.4382375

Fabrication and characterization of semiconductor rectamgular ring laser with double shallow ridge waveguides and total internal reflection mirrors

R Zhang, Z Ren, S Yu

Research output: Chapter in Book/Report/Conference proceeding › Conference Contribution (Conference Proceeding)

Abstract

Fabrication of InGaAsP double shallow ridge vertical-coupled rectangular ring lasers by a novel cascade etching technique is demonstrated. Varied threshold current dependent on coupling current and single mode operation just beyond the thresholds are observed.

Translated title of the contribution	Fabrication and characterization of semiconductor rectamgular ring laser with double shallow ridge waveguides and total internal reflection mirrors
Original language	English
Title of host publication	IEEE 20th LEOS Annual Meeting, Orlando, FL, USA
Pages	258 - 259
Number of pages	2
DOIs	https://doi.org/10.1109/LEOS.2007.4382375
Publication status	Published - 21 Oct 2007

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@inproceedings{05194c491a204b7ea8a9413268a8cd1d,

title = "Fabrication and characterization of semiconductor rectamgular ring laser with double shallow ridge waveguides and total internal reflection mirrors",

abstract = "Fabrication of InGaAsP double shallow ridge vertical-coupled rectangular ring lasers by a novel cascade etching technique is demonstrated. Varied threshold current dependent on coupling current and single mode operation just beyond the thresholds are observed.",

author = "R Zhang and Z Ren and S Yu",

year = "2007",

month = oct,

day = "21",

doi = "10.1109/LEOS.2007.4382375",

language = "English",

isbn = "9781424409259",

pages = "258 -- 259",

booktitle = "IEEE 20th LEOS Annual Meeting, Orlando, FL, USA",

}

TY - GEN

T1 - Fabrication and characterization of semiconductor rectamgular ring laser with double shallow ridge waveguides and total internal reflection mirrors

AU - Zhang, R

AU - Ren, Z

AU - Yu, S

PY - 2007/10/21

Y1 - 2007/10/21

N2 - Fabrication of InGaAsP double shallow ridge vertical-coupled rectangular ring lasers by a novel cascade etching technique is demonstrated. Varied threshold current dependent on coupling current and single mode operation just beyond the thresholds are observed.

AB - Fabrication of InGaAsP double shallow ridge vertical-coupled rectangular ring lasers by a novel cascade etching technique is demonstrated. Varied threshold current dependent on coupling current and single mode operation just beyond the thresholds are observed.

U2 - 10.1109/LEOS.2007.4382375

DO - 10.1109/LEOS.2007.4382375

M3 - Conference Contribution (Conference Proceeding)

SN - 9781424409259

SP - 258

EP - 259

BT - IEEE 20th LEOS Annual Meeting, Orlando, FL, USA

ER -

Fabrication and characterization of semiconductor rectamgular ring laser with double shallow ridge waveguides and total internal reflection mirrors

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